利用成分渐变和指数掺杂光吸收层的InP/InGaAs UTC光电二极管的速度性能比较

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014596

D. Jun, I. Kang, K. Oh, Jeong-Seon Lee, Jong-In Song

{"title":"利用成分渐变和指数掺杂光吸收层的InP/InGaAs UTC光电二极管的速度性能比较","authors":"D. Jun, I. Kang, K. Oh, Jeong-Seon Lee, Jong-In Song","doi":"10.1109/ICIPRM.2002.1014596","DOIUrl":null,"url":null,"abstract":"The photocurrent responses of InP/InGaAs uni-traveling-carrier photodiodes having conventional, compositionally graded, and exponentially doped photo-absorption layer were investigated with photo-absorption layer doping concentrations and current densities as parameters. The speed performance of these photodiodes was calculated including the effects of conduction band potential difference associated with the hole current, the p-type doping concentration, and the built-in electric field in the photo-absorption layer. According to the simulation results, the compositionally graded and the exponentially doped UTC-PDs had a superior speed performance compared with that of the conventional one regardless of the current density and the doping concentration in the photo-absorption layer.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Speed performance comparison of InP/InGaAs UTC photodiodes utilizing compositionally graded and exponentially doped photo-absorption layers\",\"authors\":\"D. Jun, I. Kang, K. Oh, Jeong-Seon Lee, Jong-In Song\",\"doi\":\"10.1109/ICIPRM.2002.1014596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The photocurrent responses of InP/InGaAs uni-traveling-carrier photodiodes having conventional, compositionally graded, and exponentially doped photo-absorption layer were investigated with photo-absorption layer doping concentrations and current densities as parameters. The speed performance of these photodiodes was calculated including the effects of conduction band potential difference associated with the hole current, the p-type doping concentration, and the built-in electric field in the photo-absorption layer. According to the simulation results, the compositionally graded and the exponentially doped UTC-PDs had a superior speed performance compared with that of the conventional one regardless of the current density and the doping concentration in the photo-absorption layer.\",\"PeriodicalId\":145425,\"journal\":{\"name\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2002.1014596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2002.1014596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

以光吸收层掺杂浓度和电流密度为参数，研究了具有常规、成分梯度和指数掺杂的InP/InGaAs单行载流子光电二极管的光电流响应。计算了这些光电二极管的速度性能，包括与空穴电流相关的导带电位差、p型掺杂浓度和光吸收层内建电场的影响。模拟结果表明，无论电流密度和光吸收层掺杂浓度如何，组成梯度和指数掺杂的utc - pd都比传统的utc - pd具有更好的速度性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Speed performance comparison of InP/InGaAs UTC photodiodes utilizing compositionally graded and exponentially doped photo-absorption layers

The photocurrent responses of InP/InGaAs uni-traveling-carrier photodiodes having conventional, compositionally graded, and exponentially doped photo-absorption layer were investigated with photo-absorption layer doping concentrations and current densities as parameters. The speed performance of these photodiodes was calculated including the effects of conduction band potential difference associated with the hole current, the p-type doping concentration, and the built-in electric field in the photo-absorption layer. According to the simulation results, the compositionally graded and the exponentially doped UTC-PDs had a superior speed performance compared with that of the conventional one regardless of the current density and the doping concentration in the photo-absorption layer.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

自引率

0.00%

发文量