低阈值高效的基于sb的i型量子阱VCSEL发射在/spl λ / = 2-2.5 /spl mu/m范围内

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014628

L. Cerutti, A. Garnache, F. Genty, C. Alibert, D. Romanini, E. Picard

{"title":"低阈值高效的基于sb的i型量子阱VCSEL发射在/spl λ / = 2-2.5 /spl mu/m范围内","authors":"L. Cerutti, A. Garnache, F. Genty, C. Alibert, D. Romanini, E. Picard","doi":"10.1109/ICIPRM.2002.1014628","DOIUrl":null,"url":null,"abstract":"Here we demonstrate a low-threshold efficient type-I quantum-well GaSb-based vertical-cavity-surface-emitting-laser (VCSEL) operating near 2.2 /spl mu/m in the continuous-wave (CW) regime up to /spl sim/220 K, with a low divergence circular beam. The structure is optically-pumped by a commercial 830 nm diode laser.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low threshold efficient Sb-based type-I quantum-well VCSEL emitting in the /spl lambda/ = 2-2.5 /spl mu/m range\",\"authors\":\"L. Cerutti, A. Garnache, F. Genty, C. Alibert, D. Romanini, E. Picard\",\"doi\":\"10.1109/ICIPRM.2002.1014628\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here we demonstrate a low-threshold efficient type-I quantum-well GaSb-based vertical-cavity-surface-emitting-laser (VCSEL) operating near 2.2 /spl mu/m in the continuous-wave (CW) regime up to /spl sim/220 K, with a low divergence circular beam. The structure is optically-pumped by a commercial 830 nm diode laser.\",\"PeriodicalId\":145425,\"journal\":{\"name\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2002.1014628\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2002.1014628","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在这里，我们展示了一种低阈值高效的i型量子阱基于gasb的垂直腔表面发射激光器(VCSEL)，在连续波(CW)状态下工作在2.2 /spl μ m/ m附近，最高可达/spl sim/220 K，具有低发散圆光束。该结构由商用830nm二极管激光器进行光泵浦。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low threshold efficient Sb-based type-I quantum-well VCSEL emitting in the /spl lambda/ = 2-2.5 /spl mu/m range

Here we demonstrate a low-threshold efficient type-I quantum-well GaSb-based vertical-cavity-surface-emitting-laser (VCSEL) operating near 2.2 /spl mu/m in the continuous-wave (CW) regime up to /spl sim/220 K, with a low divergence circular beam. The structure is optically-pumped by a commercial 830 nm diode laser.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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