mocvd生长的III-V半导体[100]表面的能量学和fs动力学

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014130

T. Hannappel, L. Toben, K. Moller, L. Gundlach, R. Ernstorfer, R. Eichberger, F. Willig

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引用次数: 0

摘要

利用反射差/各向异性光谱(RDS/RAS)原位监测了mocvd法制备InP和GaP有序[100]表面的过程。将样品无污染转移到特高压后，在20 K下测量RDS。不同的有序表面重构与峰值和精细结构相关。用飞秒2PPE研究了有序富in InP[100]表面。表面态和表面共振在/spl γ /点附近显示为2PPE谱峰，与理论预测一致。

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Energetics and fs-dynamics at [100] surfaces of MOCVD-grown III-V semiconductors

MOCVD-preparation of ordered [100] surfaces of InP and GaP was monitored in-situ with reflectance difference/anisotropy spectroscopy (RDS/RAS). RDS was measured at 20 K after contamination-free transfer of the sample to UHV. Specific RD spectra with the highest peaks and fine structure were correlated with different ordered surface reconstructions. The ordered In-rich InP[100] surface was investigated with femtosecond 2PPE. Surface states and surface resonances near the /spl Gamma/-point showed up as peaks in the 2PPE spectrum in agreement with theoretical predictions.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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