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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)最新文献

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Reliability and packaging issues in optoelectronics 光电器件中的可靠性和封装问题
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014422
M. Fukuda
{"title":"Reliability and packaging issues in optoelectronics","authors":"M. Fukuda","doi":"10.1109/ICIPRM.2002.1014422","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014422","url":null,"abstract":"Reliability and packaging issues are discussed for InGaAsP/InP laser diodes and photodiodes used in current optical fiber transmission systems such as DWDM, SONET/SDH, and data communications.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125899567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantitative X-ray analysis of high performance InP/(InGa)As:C HBT for rapid non-destructive material qualification 用于快速无损材料鉴定的高性能InP/(InGa)As:C HBT的定量x射线分析
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014120
P. Velling, D. Keiper, A. Brennemann, M. Agethen, G. Janssen, E. Bushehri, R. Bertenburg
{"title":"Quantitative X-ray analysis of high performance InP/(InGa)As:C HBT for rapid non-destructive material qualification","authors":"P. Velling, D. Keiper, A. Brennemann, M. Agethen, G. Janssen, E. Bushehri, R. Bertenburg","doi":"10.1109/ICIPRM.2002.1014120","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014120","url":null,"abstract":"Carbon doped InP/(InGa)As Heterostructure Bipolar Transistors (HBT) are of interest for today's (OC-768) and tomorrow's (OC-3072, 100 Gbit Ethernet, UMTS) communication standards. For a reliable fabrication of these complex radio frequency (opto-)electronic circuits, a quantitative InP process technology control is necessary starting at the level of device epi-layer stacks. In this paper the quantitative characterization of an InP/(InGa)As:C HBT is carried out by non-destructive X-ray analysis. Based on X-ray measurements in 004- and 002-reflection, a detailed analysis of complex device layer stacks is purposed. As a result, an automatic calculation of layer parameters, e.g. thickness and composition is possible, reducing the turnaround time for statistical process control (SPC).","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126161637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High performance 1.32 /spl mu/m GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy 基于分子束外延的1.32 /spl mu/m GaInNAs/GaAs单量子阱激光器
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014084
Wei Li, J. Konttinen, C. Peng, T. Jouhti, E. Pavelescu, M. Suominen, M. Pessa
{"title":"High performance 1.32 /spl mu/m GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy","authors":"Wei Li, J. Konttinen, C. Peng, T. Jouhti, E. Pavelescu, M. Suominen, M. Pessa","doi":"10.1109/ICIPRM.2002.1014084","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014084","url":null,"abstract":"GaInNAs/GaAs quantum well (QW) structures and lasers are grown by molecular beam epitaxy (MBE) using an RF-plasma source. Optimal GaInNAs/GaAs QW structures have been designed and grown in order to achieve the brightest and narrowest photoluminescence (PL) spectra beyond 1.30 /spl mu/m. State-of-the-art GaInNAs/GaAs SQW lasers operating at 1.32 /spl mu/m have been demonstrated. For a broad area oxide stripe, uncoated Fabry-Perot laser with a cavity length of 1600 /spl mu/m, threshold current density as low as 546 A/cm/sup 2/ is obtained at room temperature. Optical output up to 40 mW per facet under continuous wave operation is achieved for these uncoated lasers at room temperature.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124174431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence behaviour of GaInNAs quantum wells annealed at high temperature 高温退火下GaInNAs量子阱的光致发光行为
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014486
T. K. Ng, S. Yoon, S. Wang, W. Loke, W. Fan, K. Yew, Z.Z. Sun
{"title":"Photoluminescence behaviour of GaInNAs quantum wells annealed at high temperature","authors":"T. K. Ng, S. Yoon, S. Wang, W. Loke, W. Fan, K. Yew, Z.Z. Sun","doi":"10.1109/ICIPRM.2002.1014486","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014486","url":null,"abstract":"The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high temperature post-growth annealing were studied. The QWs were grown using a radio frequency (RF) nitrogen plasma source in conjunction with a solid source molecular beam epitaxy (SSMBE) system. It is found that annealing at high temperature (840/spl deg/C) and long duration (10 min) results in significant improvement in the PL characteristics of the GaInNAs QWs. The PL intensity of the GaInNAs QW could improve by as much as 30 times after annealing, and its full-width-at-half-maximum (FWHM) reduces from 63.1 meV to a small value of 16.3 meV after annealing. There are two blueshift regions in the wavelength shift vs. nitrogen composition curve that shows the GaInNAs PL blueshift after annealing as a function of nitrogen composition. For as-grown GaInNAs QWs with a low nitrogen composition of less than /spl sim/1% (Region A), increasing indium composition from 22% to 30% during growth results in an increase of PL blueshift (after annealing) from 72 nm to 87 nm. On the other hand, for the as-grown GaInNAs QWs having higher nitrogen compositions of /spl sim/1% to /spl sim/3% (Region B), indium compositions (within the range of 19.5% and 25%) was found to have insignificant effect on the PL blueshift. In fact, the PL blueshift (as a result of annealing) increases rapidly from 72 nm to /spl sim/200 nm. The dominant mechanisms that give rise to the blueshift of the PL peak wavelength in GaInNAs QWs are proposed based on the PL, X-ray diffraction (XRD) and reflection high electron energy diffraction (RHEED) observations. The investigation has important implications for the growth of GaInNAs-based laser emitting at 1.31 /spl mu/m wavelength.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127920956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth temperature dependence of annealing effect for GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition 金属有机化学气相沉积GaInNAs/GaAs量子阱退火效应的生长温度依赖性
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014340
M. Kawaguchi, T. Miyamoto, S. Minobe, F. Koyama, K. Iga
{"title":"Growth temperature dependence of annealing effect for GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition","authors":"M. Kawaguchi, T. Miyamoto, S. Minobe, F. Koyama, K. Iga","doi":"10.1109/ICIPRM.2002.1014340","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014340","url":null,"abstract":"We have investigated the growth temperature dependence of the optical property change induced by a thermal annealing for a GaInNAs/GaAs quantum well grown by metalorganic chemical vapor deposition. We found that the wavelength blue shift induced by the thermal annealing of GaInNAs strongly depends on the growth temperature. The emission wavelength blue shift significantly decreased at growth temperatures lower than 500/spl deg/C. The obtained result will be useful for improving the performance of GaInNAs lasers especially for vertical-cavity surface-emitting lasers.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123910371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical investigations on InP and GaInP quantum dots InP和GaInP量子点的光学研究
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014492
M. Jetter, G. Beirne, M. Rossi, J. Porsche, F. Scholz, H. Schweizer
{"title":"Optical investigations on InP and GaInP quantum dots","authors":"M. Jetter, G. Beirne, M. Rossi, J. Porsche, F. Scholz, H. Schweizer","doi":"10.1109/ICIPRM.2002.1014492","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014492","url":null,"abstract":"We present power and temperature dependent photoluminescence measurements of InP and GaInP self assembled quantum dots. In order to investigate the recombination mechanisms in these dots, time resolved measurements were performed. To examine the properties of a single quantum dot we have structured the samples with mesas of different sizes, to reduce the amount of optically active dots. The PL results of these experiments are also reported here.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125248857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Control of growth mode and wire width in selective molecular beam epitaxy growth of InGaAs quantum wire arrays on InP [001] substrates InP衬底上InGaAs量子线阵列选择性分子束外延生长模式和线宽的控制[001]
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014488
Chao Jiang, T. Muranaka, H. Hasegawa
{"title":"Control of growth mode and wire width in selective molecular beam epitaxy growth of InGaAs quantum wire arrays on InP [001] substrates","authors":"Chao Jiang, T. Muranaka, H. Hasegawa","doi":"10.1109/ICIPRM.2002.1014488","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014488","url":null,"abstract":"Control of the growth mode and the wire width were attempted for selective MBE growth of InGaAs quantum wire (QWR) arrays on patterned [001] InP substrates. InGaAs ridge structure arrays were grown first, and then InAlAs/InGaAs/InAlAs layers were supplied to grow QWR arrays by self-organization. By combining a Ga-stabilized flat-top growth mode and an As stabilized sharp-top growth mode under low V/III ratios for InGaAs ridge structure growth, initial pattern non-uniformity was removed, achieving ridge roughness below a monoatomic step level. Highly uniform and narrow arrow-headed InGaAs QWR arrays were formed under a tight wire width control, showing strong PL emission with a narrow FWHM of 19 meV.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"283 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117349122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal resistance characterization of 200 GHz F/sub t/ InGaAs/InAlAs HBTs
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014116
C. Fields, J. Foschaar, S. Thomas
{"title":"Thermal resistance characterization of 200 GHz F/sub t/ InGaAs/InAlAs HBTs","authors":"C. Fields, J. Foschaar, S. Thomas","doi":"10.1109/ICIPRM.2002.1014116","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014116","url":null,"abstract":"We present the results of measurements of the thermal resistivity of InP-based HBTs with cutoff frequencies, f/sub t/ /spl sim/200 GHz and with f/sub max/ over 300 GHz. The measurements were on full-thickness 3\" InP wafers at T/sub amb/ from 30 - 210/spl deg/C and three separate emitter current densities. We present data on three device sizes and two device layouts and discuss the relationship of V/sub be/ to temperature at these elevated power and temperature levels.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123998416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Comparative review of (GaIn)(PAs), (AlGaIn)As, (GaIn)(NaS) and Ga(AsSb) based materials for 1.3 /spl mu/m laser applications (GaIn)(PAs)、(AlGaIn)As、(GaIn)(NaS)和Ga(AsSb)基材料在1.3 /spl mu/m激光应用中的比较研究
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014445
W. Stolz
{"title":"Comparative review of (GaIn)(PAs), (AlGaIn)As, (GaIn)(NaS) and Ga(AsSb) based materials for 1.3 /spl mu/m laser applications","authors":"W. Stolz","doi":"10.1109/ICIPRM.2002.1014445","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014445","url":null,"abstract":"Summary form only given. Laser devices with emission wavelengths at 1.3 /spl mu/m are of key importance for applications in data and telecommunication systems in particular for local area and metropolitan area networks. At present, primarily the InP-based (GaIn)(PAs) and (AlGaIn)As material systems have been applied to realize such laser structures. In recent years, novel material systems and heterostructures like (GaIn)(NAs) and Ga(AsSb) have gained increasing interest due to their unique physical properties. This review intends to summarize the present situation of the device performance both for edge-emitting as well as vertical cavity surface emitting (VCSEL) laser structures related to materials and heterostructure properties point of view.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116961748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
In-situ etching of InP and related P materials in MOVPE chamber using PCl/sub 3/ 用PCl/ sub3 / /在MOVPE腔室中原位蚀刻InP及相关P材料
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014400
A. Ougazzaden, L. Peticolas, M. Rader, S. Chu
{"title":"In-situ etching of InP and related P materials in MOVPE chamber using PCl/sub 3/","authors":"A. Ougazzaden, L. Peticolas, M. Rader, S. Chu","doi":"10.1109/ICIPRM.2002.1014400","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014400","url":null,"abstract":"In this work, we investigate in-situ etching of InP, InGaAsP and InGaAlAs inside a MOVPE chamber for various etching conditions. Phosphorus Trichloride (PCl/sub 3/) has been used in gaseous form for etching. Precise control of the vertical and lateral etching as a function of the etch conditions has been achieved. With SiO/sub 2/ stripes, mesa shapes with smooth non re-entrant sidewall 111 planes were formed in a large range of etch temperatures and pressures. Deep selective area mesa etching (4 micron) followed by regrowth having excellent surface morphology and perfect planarity were obtained.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115038744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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