InP和GaInP量子点的光学研究

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014492

M. Jetter, G. Beirne, M. Rossi, J. Porsche, F. Scholz, H. Schweizer

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引用次数: 1

摘要

我们提出了与功率和温度相关的InP和GaInP自组装量子点的光致发光测量。为了研究这些点的复合机制，进行了时间分辨测量。为了检验单个量子点的性质，我们用不同尺寸的台面来构造样品，以减少光学活性点的数量。本文还报道了这些实验的PL结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optical investigations on InP and GaInP quantum dots

We present power and temperature dependent photoluminescence measurements of InP and GaInP self assembled quantum dots. In order to investigate the recombination mechanisms in these dots, time resolved measurements were performed. To examine the properties of a single quantum dot we have structured the samples with mesas of different sizes, to reduce the amount of optically active dots. The PL results of these experiments are also reported here.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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