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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)最新文献

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InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate 利用液相氧化InGaAs栅极的基于inp的MOSFET技术
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014307
Shin-Jae Kang, Jae-Chun Han, Jeong-Hoon Kim, S. Jo, Seongseop Park, Jong-In Song
{"title":"InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate","authors":"Shin-Jae Kang, Jae-Chun Han, Jeong-Hoon Kim, S. Jo, Seongseop Park, Jong-In Song","doi":"10.1109/ICIPRM.2002.1014307","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014307","url":null,"abstract":"We first report the characteristics of InGaAs-oxide grown by a liquid phase oxidation using a gallium-ion-contained nitric acid solution and an oxygen plasma treatment and depletion-mode In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs using the InGaAs-oxide. The characteristics of InGaAs-oxide showed low leakage current and small capacitance-voltage hysteresis. 1.5/spl times/50 /spl mu/m/sup 2/ depletion-mode In/sub 0.53/Ga/sub 0.47/Asand InP-channel MOSFETs were fabricated by using a conventional optical lithography. The gate oxide was formed by a liquid phase oxidation of InGaAs ohmic cap layer and subsequently an oxygen plasma treatment after mesa etching and ohmic metallization. The drain current-voltage characteristics of In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs showed a complete pinch-off and saturation. The f/sub T/ and f/sub max/ of the In/sub 0.53/Ga/sub 0.47/As-channel MOSFET were approximately 9 GHz and 10 GHz, respectively, and those of the InP-channel MOSFET were approximately 10.5 GHz and 70 GHz, respectively.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133293768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-density electron gas induced by atomic ordering in undoped Ga/sub 0.5/In/sub 0.5/P/GaAs heterostructure 未掺杂Ga/sub 0.5/ in /sub 0.5/P/GaAs异质结构中原子有序诱导的高密度电子气体
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014480
K. Yamashita, Y. Matsuura, T. Kita, O. Wada
{"title":"High-density electron gas induced by atomic ordering in undoped Ga/sub 0.5/In/sub 0.5/P/GaAs heterostructure","authors":"K. Yamashita, Y. Matsuura, T. Kita, O. Wada","doi":"10.1109/ICIPRM.2002.1014480","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014480","url":null,"abstract":"We investigated two-dimensional properties of electrons accumulated at a long-range ordered Ga/sub 0.5/In/sub 0.5/P/GaAs heterointerface by magneto-photoluminescence (PL) measurements. The disordered Ga/sub 0.5/In/sub 0.5/P/GaAs sample shows a typical GaAs-PL spectrum for the bulk GaAs grown by metalorganic vapor-phase epitaxy. On the other hand, the GaAs-PL spectrum for the ordered sample with order parameter /spl eta/ of 0.30 shows transitions related to a quantized electron state in a triangular potential buried at the heterointerface and emission of the Fermi-edge singularity. The observed PL spectrum for the ordered sample demonstrates that a two-dimensional electron gas is induced at the Ga/sub 0.5/In/sub 0.5/P/GaAs heterointerface. In magneto-PL measurements, anisotropy of the reduced mass between parallel and perpendicular to the heterointerface was confirmed. Furthermore, the clear optical Shubnikov-de Haas oscillation was found in PL transition energy under the perpendicular magnetic field. The sheet-carrier density of 2DEG is deduced from the period of the observed Shubnikov-de Haas oscillation to be /spl sim/1.20/spl times/10/sup 12/ cm/sup -2/.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132083287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spectral mode dynamics of short cavity quantum-dot lasers at 1.13 /spl mu/m 1.13 /spl μ m短腔量子点激光器的光谱模式动力学
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014159
C. Ribbat, S. Bognar, R. Sellin, D. Bimberg
{"title":"Spectral mode dynamics of short cavity quantum-dot lasers at 1.13 /spl mu/m","authors":"C. Ribbat, S. Bognar, R. Sellin, D. Bimberg","doi":"10.1109/ICIPRM.2002.1014159","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014159","url":null,"abstract":"Temporally resolved longitudinal mode dynamics for 6-fold stacked short cavity quantum dot (QD) lasers is investigated in the /spl mu/sec time-range. Measurements were performed at room temperature and at 100K. After turn-on a red-shift of single longitudinal modes, a blue-shift of the mode groups and a red shift of the mean value of the spectra are observed simultaneously. Temperature dependent leakage loss spectra due to leaky substrate modes are calculated. The blue shift of the mode-grouping, predicted by the theory, is in good agreement with the experimental data.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116339875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
All optical wavelength converter based on directional coupler with electro-absorption and exciton effect 基于电吸收和激子效应的定向耦合器的全光波长变换器
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014470
N. Sroymadee, M. Kato, Y. Nakano
{"title":"All optical wavelength converter based on directional coupler with electro-absorption and exciton effect","authors":"N. Sroymadee, M. Kato, Y. Nakano","doi":"10.1109/ICIPRM.2002.1014470","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014470","url":null,"abstract":"We propose an all-optical wavelength converter based on a directional coupler structure incorporating a multiple quantum well (MQW) p-i-n junction being reverse-biased, and describe results of device simulation as well as its fabrication process feasibility. By using the Korn-Luttinger band structure model and the two-particle effective mass exciton model, the absorption and refractive index change spectra versus carrier densities in 1.50 /spl mu/m QW structures of InGaAsP/InGaAsP/InP and InGaAs/InAlAs/InP material systems have been obtained. A two-dimensional (2D) beam propagation method (BPM) calculation is made use of to predict all-optical wavelength conversion characteristics. The simulation reveals that the transfer functions from input to output lights become digital-like, and that optical power for switching depends on carrier sweep-out time and the degree of the exciton effect.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131930502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of GaNAs strain compensating layer over InAs quantum dots grown by MOMBE gaas应变补偿层对MOMBE生长的InAs量子点的影响
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014489
S. Ganapathy, X.Q. Zhang, K. Uesugi, H. Kumano, I. Suemune, B. Kim, T. Seong
{"title":"Effect of GaNAs strain compensating layer over InAs quantum dots grown by MOMBE","authors":"S. Ganapathy, X.Q. Zhang, K. Uesugi, H. Kumano, I. Suemune, B. Kim, T. Seong","doi":"10.1109/ICIPRM.2002.1014489","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014489","url":null,"abstract":"We demonstrated the 1.55 /spl mu/m light emission at room temperature from self-assembled InAs quantum dots embedded inside the GaNAs strain-compensating layer. InAs quantum dots have been capped with tensile strained GaNAs instead of InGaAs and GaAs to compensate the compressive strain formed due to InAs QDs to keep the total strain of the system minimum; as a result the PL peak of InAs QDs shifts towards longer wavelength depending on the N% in GaNAs. The wavelength of 1.55 /spl mu/m is the longest wavelength so far achieved in self-assembled quantum dots grown on GaAs substrates, which would be promising for application to light source in long-wavelength optical-fiber communication system.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132907261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Innovative nitride passivation of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD) 利用高密度电感耦合等离子体CVD (HD-ICP-CVD)实现0.1 /spl μ m InGaAs/InAlAs/InP HEMTs的创新氮化钝化
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014392
Y. Chou, R. Lai, G. Li, P. Nam, R. Grundbacher, M. Barsky, H.K. Kim, Y. Ra, A. Oki, D. Streit
{"title":"Innovative nitride passivation of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD)","authors":"Y. Chou, R. Lai, G. Li, P. Nam, R. Grundbacher, M. Barsky, H.K. Kim, Y. Ra, A. Oki, D. Streit","doi":"10.1109/ICIPRM.2002.1014392","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014392","url":null,"abstract":"A novel nitride passivation of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD) is reported. The nitride films deposited by HD-ICP-CVD have a lower wet HF etch rate (high density) and lower hydrogen concentration than those deposited by PECVD. A reduction of surface leakage current after passivation was observed; resulting in an approximate 40% improvement of off-state reverse breakdown voltage over that of PECVD passivated devices. The increase in breakdown voltage implies a potential improvement in power performance at millimeter wave frequency. A successful demonstration of HD-ICP-CVD passivated InP HEMTs promises adoption of HD-ICP-CVD nitride deposition for the next-generation InP HEMT passivation technique.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122125477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Importance of gate-recess structure to the cutoff frequency of ultra-high-speed InGaAs/InAlAs HEMTs 栅极凹槽结构对超高速InGaAs/InAlAs hemt截止频率的影响
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014465
K. Shinohara, Y. Yamashita, A. Endoh, K. Hikosaka, T. Matsui, S. Hiyamizu, T. Mimura
{"title":"Importance of gate-recess structure to the cutoff frequency of ultra-high-speed InGaAs/InAlAs HEMTs","authors":"K. Shinohara, Y. Yamashita, A. Endoh, K. Hikosaka, T. Matsui, S. Hiyamizu, T. Mimura","doi":"10.1109/ICIPRM.2002.1014465","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014465","url":null,"abstract":"We have succeeded in developing 30-nm-gate lattice-matched InGaAs/InAlAs HEMTs with an extremely high cutoff frequency f/sub t/ of 472 GHz, the highest value yet reported for any transistor. The superior high-speed characteristics of our HEMT were mainly due to a much reduced lateral gate-recess length while maintaining a small gate-to-channel distance, which enhanced the average electron velocity under the gate. We fabricated asymmetrically recessed-gate HEMTs to separately investigate the effect of source- and drain-side recess lengths on f/sub t/, and clarified that the drain-side recess is more critical to a superior f/sub t/. Monte Carlo simulation results were consistent with the experimental observations.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125888897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Highly uniform 4-inch diameter ingaas/inp epitaxial wafer for pin-pd application 高度均匀的4英寸直径ingaas/inp外延片，用于引脚-pd应用
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014588
H. Doi, Y. Iguchi, H. Kimura, T. Iwasaki, Y. Mirua, M. Yokogawa
{"title":"Highly uniform 4-inch diameter ingaas/inp epitaxial wafer for pin-pd application","authors":"H. Doi, Y. Iguchi, H. Kimura, T. Iwasaki, Y. Mirua, M. Yokogawa","doi":"10.1109/ICIPRM.2002.1014588","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014588","url":null,"abstract":"InGaAs/InP epitaxial layers were grown on four-inch S-doped InP substrates using production-scale organometallic vapor-phase epitaxy (OMVPE) system. High uniformity has been obtained by optimizing the growth conditions. For example, thickness uniformity of 1.09% in InGaAs layer, 1.39% in InP layer has been obtained. Also low dark current (<0.3 nA/200 /spl mu/m /spl phi/ at V/sub R/=5 V) has been achieved in planar type PIN-PD device. These results will highlight the large-diameter InGaAs/InP epitaxial growth for device cost performance.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125986930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High current (100 mA) InP/InGaAs/InP DHBTs with 330 GHz f/sub max/ 高电流(100 mA) InP/InGaAs/InP dhbt，最大功率为330 GHz /sub /
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014097
Yun Wei, Sangmin Lee, P. Sundararajan, M. Dahlstrom, M. Urteaga, M. Rodwell
{"title":"High current (100 mA) InP/InGaAs/InP DHBTs with 330 GHz f/sub max/","authors":"Yun Wei, Sangmin Lee, P. Sundararajan, M. Dahlstrom, M. Urteaga, M. Rodwell","doi":"10.1109/ICIPRM.2002.1014097","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014097","url":null,"abstract":"We report high f/sub max/ and high current InP/InGaAs/InP DHBT in transferred-substrate technology. The common base device with equivalent emitter size of 128 /spl mu/m/sup 2/ exhibits f/sub max/ of 330 GHz at a current of 100 mA. The common emitter device with emitter area of 64 /spl mu/m/sup 2/ shows f/sub max/ of 371 GHz when biased at 57 mA. The breakdown voltage of these DHBTs is up to 7 V at low current density. All the devices are realized in multi-finger structure that was deliberately designed to improve the thermal stability at high power operation and to reduce the parasitics. To our knowledge, this is the highest f/sub max/ for a DHBT biased at such high current.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125452717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Theoretical study of dislocations in highly mismatched III-V epitaxial heterostructures 高度不匹配III-V外延异质结构中位错的理论研究
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014371
K. Masuda-Jindo, R. Kikuchi
{"title":"Theoretical study of dislocations in highly mismatched III-V epitaxial heterostructures","authors":"K. Masuda-Jindo, R. Kikuchi","doi":"10.1109/ICIPRM.2002.1014371","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014371","url":null,"abstract":"Using the tight-binding molecular dynamics (TBMD) method, we study the atomistic properties of strain included dislocations, both 60/spl deg/ and 90/spl deg/ types, in medium and highly mismatched III-V semiconductor heterostructures, like InGaAs/GaAs, InP/GaAs and InP/Si systems. The atomic diffusion in the semiconductor interface is investigated via vacancy mechanism of diffusion using the path probability method (PPM). The critical layer thickness for the generation of the misfit dislocations is also estimated and compared with the experimental results.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125473182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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