利用液相氧化InGaAs栅极的基于inp的MOSFET技术

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014307

Shin-Jae Kang, Jae-Chun Han, Jeong-Hoon Kim, S. Jo, Seongseop Park, Jong-In Song

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引用次数: 0

摘要

我们首次报道了使用含镓离子的硝酸溶液和氧等离子体处理液相氧化生长的InGaAs-oxide的特性，以及使用InGaAs-oxide的In/sub 0.53/Ga/sub 0.47/As和inp通道mosfet的耗尽模式。InGaAs-oxide具有漏电流小、容压滞后小的特点。采用常规光刻技术制备了1.5/spl倍/50 /spl μ /m/sup 2/耗尽模式In/sub 0.53/Ga/sub 0.47/ as3和inp沟道mosfet。栅极氧化物是通过InGaAs欧姆帽层的液相氧化，然后经过台面蚀刻和欧姆金属化后的氧等离子体处理形成的。In/sub 0.53/Ga/sub 0.47/As和inp沟道mosfet的漏极电流-电压特性表现出完全的掐断和饱和。In/sub 0.53/Ga/sub 0.47/ as沟道MOSFET的f/sub T/和f/sub max/分别约为9 GHz和10 GHz, inp沟道MOSFET的f/sub T/和f/sub max/分别约为10.5 GHz和70 GHz。

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InP-based MOSFET technology utilizing a liquid phase oxidized InGaAs gate

We first report the characteristics of InGaAs-oxide grown by a liquid phase oxidation using a gallium-ion-contained nitric acid solution and an oxygen plasma treatment and depletion-mode In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs using the InGaAs-oxide. The characteristics of InGaAs-oxide showed low leakage current and small capacitance-voltage hysteresis. 1.5/spl times/50 /spl mu/m/sup 2/ depletion-mode In/sub 0.53/Ga/sub 0.47/Asand InP-channel MOSFETs were fabricated by using a conventional optical lithography. The gate oxide was formed by a liquid phase oxidation of InGaAs ohmic cap layer and subsequently an oxygen plasma treatment after mesa etching and ohmic metallization. The drain current-voltage characteristics of In/sub 0.53/Ga/sub 0.47/As- and InP-channel MOSFETs showed a complete pinch-off and saturation. The f/sub T/ and f/sub max/ of the In/sub 0.53/Ga/sub 0.47/As-channel MOSFET were approximately 9 GHz and 10 GHz, respectively, and those of the InP-channel MOSFET were approximately 10.5 GHz and 70 GHz, respectively.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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