利用高密度电感耦合等离子体CVD (HD-ICP-CVD)实现0.1 /spl μ m InGaAs/InAlAs/InP HEMTs的创新氮化钝化

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014392

Y. Chou, R. Lai, G. Li, P. Nam, R. Grundbacher, M. Barsky, H.K. Kim, Y. Ra, A. Oki, D. Streit

{"title":"利用高密度电感耦合等离子体CVD (HD-ICP-CVD)实现0.1 /spl μ m InGaAs/InAlAs/InP HEMTs的创新氮化钝化","authors":"Y. Chou, R. Lai, G. Li, P. Nam, R. Grundbacher, M. Barsky, H.K. Kim, Y. Ra, A. Oki, D. Streit","doi":"10.1109/ICIPRM.2002.1014392","DOIUrl":null,"url":null,"abstract":"A novel nitride passivation of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD) is reported. The nitride films deposited by HD-ICP-CVD have a lower wet HF etch rate (high density) and lower hydrogen concentration than those deposited by PECVD. A reduction of surface leakage current after passivation was observed; resulting in an approximate 40% improvement of off-state reverse breakdown voltage over that of PECVD passivated devices. The increase in breakdown voltage implies a potential improvement in power performance at millimeter wave frequency. A successful demonstration of HD-ICP-CVD passivated InP HEMTs promises adoption of HD-ICP-CVD nitride deposition for the next-generation InP HEMT passivation technique.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Innovative nitride passivation of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD)\",\"authors\":\"Y. Chou, R. Lai, G. Li, P. Nam, R. Grundbacher, M. Barsky, H.K. Kim, Y. Ra, A. Oki, D. Streit\",\"doi\":\"10.1109/ICIPRM.2002.1014392\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel nitride passivation of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD) is reported. The nitride films deposited by HD-ICP-CVD have a lower wet HF etch rate (high density) and lower hydrogen concentration than those deposited by PECVD. A reduction of surface leakage current after passivation was observed; resulting in an approximate 40% improvement of off-state reverse breakdown voltage over that of PECVD passivated devices. The increase in breakdown voltage implies a potential improvement in power performance at millimeter wave frequency. A successful demonstration of HD-ICP-CVD passivated InP HEMTs promises adoption of HD-ICP-CVD nitride deposition for the next-generation InP HEMT passivation technique.\",\"PeriodicalId\":145425,\"journal\":{\"name\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"volume\":\"133 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2002.1014392\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2002.1014392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

报道了一种利用高密度电感耦合等离子体CVD (HD-ICP-CVD)对0.1 /spl μ m InGaAs/InAlAs/InP HEMTs进行氮化钝化的新方法。与PECVD沉积的氮化膜相比，HD-ICP-CVD沉积的氮化膜具有更低的湿HF蚀刻速率(高密度)和更低的氢浓度。钝化后表面漏电流减小;与PECVD钝化器件相比，其状态反向击穿电压提高了约40%。击穿电压的增加意味着毫米波频率下功率性能的潜在改善。HD-ICP-CVD钝化InP HEMT的成功证明了HD-ICP-CVD氮化沉积技术在下一代InP HEMT钝化技术中的应用。

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Innovative nitride passivation of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD)

A novel nitride passivation of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD) is reported. The nitride films deposited by HD-ICP-CVD have a lower wet HF etch rate (high density) and lower hydrogen concentration than those deposited by PECVD. A reduction of surface leakage current after passivation was observed; resulting in an approximate 40% improvement of off-state reverse breakdown voltage over that of PECVD passivated devices. The increase in breakdown voltage implies a potential improvement in power performance at millimeter wave frequency. A successful demonstration of HD-ICP-CVD passivated InP HEMTs promises adoption of HD-ICP-CVD nitride deposition for the next-generation InP HEMT passivation technique.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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