高度均匀的4英寸直径ingaas/inp外延片，用于引脚-pd应用

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014588

H. Doi, Y. Iguchi, H. Kimura, T. Iwasaki, Y. Mirua, M. Yokogawa

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引用次数: 0

摘要

采用生产规模的有机金属气相外延(OMVPE)系统在4英寸s掺杂InP衬底上生长InGaAs/InP外延层。通过优化生长条件，获得了较高的均匀性。例如，InGaAs层厚度均匀性为1.09%，InP层厚度均匀性为1.39%。在平面型PIN-PD器件中也实现了低暗电流(<0.3 nA/200 /spl mu/m /spl phi/ at V/sub R/=5 V)。这些结果将突出大直径InGaAs/InP外延生长对器件成本性能的影响。

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Highly uniform 4-inch diameter ingaas/inp epitaxial wafer for pin-pd application

InGaAs/InP epitaxial layers were grown on four-inch S-doped InP substrates using production-scale organometallic vapor-phase epitaxy (OMVPE) system. High uniformity has been obtained by optimizing the growth conditions. For example, thickness uniformity of 1.09% in InGaAs layer, 1.39% in InP layer has been obtained. Also low dark current (<0.3 nA/200 /spl mu/m /spl phi/ at V/sub R/=5 V) has been achieved in planar type PIN-PD device. These results will highlight the large-diameter InGaAs/InP epitaxial growth for device cost performance.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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