Highly uniform 4-inch diameter ingaas/inp epitaxial wafer for pin-pd application

Abstract

InGaAs/InP epitaxial layers were grown on four-inch S-doped InP substrates using production-scale organometallic vapor-phase epitaxy (OMVPE) system. High uniformity has been obtained by optimizing the growth conditions. For example, thickness uniformity of 1.09% in InGaAs layer, 1.39% in InP layer has been obtained. Also low dark current (<0.3 nA/200 /spl mu/m /spl phi/ at V/sub R/=5 V) has been achieved in planar type PIN-PD device. These results will highlight the large-diameter InGaAs/InP epitaxial growth for device cost performance.