{"title":"All optical wavelength converter based on directional coupler with electro-absorption and exciton effect","authors":"N. Sroymadee, M. Kato, Y. Nakano","doi":"10.1109/ICIPRM.2002.1014470","DOIUrl":null,"url":null,"abstract":"We propose an all-optical wavelength converter based on a directional coupler structure incorporating a multiple quantum well (MQW) p-i-n junction being reverse-biased, and describe results of device simulation as well as its fabrication process feasibility. By using the Korn-Luttinger band structure model and the two-particle effective mass exciton model, the absorption and refractive index change spectra versus carrier densities in 1.50 /spl mu/m QW structures of InGaAsP/InGaAsP/InP and InGaAs/InAlAs/InP material systems have been obtained. A two-dimensional (2D) beam propagation method (BPM) calculation is made use of to predict all-optical wavelength conversion characteristics. The simulation reveals that the transfer functions from input to output lights become digital-like, and that optical power for switching depends on carrier sweep-out time and the degree of the exciton effect.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2002.1014470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We propose an all-optical wavelength converter based on a directional coupler structure incorporating a multiple quantum well (MQW) p-i-n junction being reverse-biased, and describe results of device simulation as well as its fabrication process feasibility. By using the Korn-Luttinger band structure model and the two-particle effective mass exciton model, the absorption and refractive index change spectra versus carrier densities in 1.50 /spl mu/m QW structures of InGaAsP/InGaAsP/InP and InGaAs/InAlAs/InP material systems have been obtained. A two-dimensional (2D) beam propagation method (BPM) calculation is made use of to predict all-optical wavelength conversion characteristics. The simulation reveals that the transfer functions from input to output lights become digital-like, and that optical power for switching depends on carrier sweep-out time and the degree of the exciton effect.