基于分子束外延的1.32 /spl mu/m GaInNAs/GaAs单量子阱激光器

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014084

Wei Li, J. Konttinen, C. Peng, T. Jouhti, E. Pavelescu, M. Suominen, M. Pessa

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引用次数: 0

摘要

利用射频等离子体源，通过分子束外延(MBE)生长GaInNAs/GaAs量子阱(QW)结构和激光器。为了获得超过1.30 /spl μ m的最亮和最窄的光致发光(PL)光谱，设计和生长了最佳的GaInNAs/GaAs量子阱结构。最先进的GaInNAs/GaAs SQW激光器工作在1.32 /spl mu/m。对于大面积氧化条纹、无涂层法布里-珀罗激光器，在室温下获得腔长1600 /spl μ m，阈值电流密度低至546 a /cm/sup 2/。在室温下，在连续波操作下，这些无涂层激光器的光输出高达40毫瓦。

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High performance 1.32 /spl mu/m GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

GaInNAs/GaAs quantum well (QW) structures and lasers are grown by molecular beam epitaxy (MBE) using an RF-plasma source. Optimal GaInNAs/GaAs QW structures have been designed and grown in order to achieve the brightest and narrowest photoluminescence (PL) spectra beyond 1.30 /spl mu/m. State-of-the-art GaInNAs/GaAs SQW lasers operating at 1.32 /spl mu/m have been demonstrated. For a broad area oxide stripe, uncoated Fabry-Perot laser with a cavity length of 1600 /spl mu/m, threshold current density as low as 546 A/cm/sup 2/ is obtained at room temperature. Optical output up to 40 mW per facet under continuous wave operation is achieved for these uncoated lasers at room temperature.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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