用于快速无损材料鉴定的高性能InP/(InGa)As:C HBT的定量x射线分析

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014120

P. Velling, D. Keiper, A. Brennemann, M. Agethen, G. Janssen, E. Bushehri, R. Bertenburg

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引用次数: 0

摘要

掺杂碳的InP/(InGa)As异质结构双极晶体管(HBT)是当今(OC-768)和未来(OC-3072, 100 Gbit以太网，UMTS)通信标准的兴趣。为了可靠地制造这些复杂的射频(光电)电子电路，从器件外延层堆栈的水平开始，需要定量的InP工艺技术控制。本文采用无损x射线分析方法对InP/(InGa)As:C HBT进行了定量表征。基于x射线在004-和002-反射中的测量，对复杂器件层栈进行了详细分析。因此，可以自动计算层参数，例如厚度和成分，从而减少统计过程控制(SPC)的周转时间。

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Quantitative X-ray analysis of high performance InP/(InGa)As:C HBT for rapid non-destructive material qualification

Carbon doped InP/(InGa)As Heterostructure Bipolar Transistors (HBT) are of interest for today's (OC-768) and tomorrow's (OC-3072, 100 Gbit Ethernet, UMTS) communication standards. For a reliable fabrication of these complex radio frequency (opto-)electronic circuits, a quantitative InP process technology control is necessary starting at the level of device epi-layer stacks. In this paper the quantitative characterization of an InP/(InGa)As:C HBT is carried out by non-destructive X-ray analysis. Based on X-ray measurements in 004- and 002-reflection, a detailed analysis of complex device layer stacks is purposed. As a result, an automatic calculation of layer parameters, e.g. thickness and composition is possible, reducing the turnaround time for statistical process control (SPC).

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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