Optical investigations on InP and GaInP quantum dots

Abstract

We present power and temperature dependent photoluminescence measurements of InP and GaInP self assembled quantum dots. In order to investigate the recombination mechanisms in these dots, time resolved measurements were performed. To examine the properties of a single quantum dot we have structured the samples with mesas of different sizes, to reduce the amount of optically active dots. The PL results of these experiments are also reported here.