InP衬底上InGaAs量子线阵列选择性分子束外延生长模式和线宽的控制[001]

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014488

Chao Jiang, T. Muranaka, H. Hasegawa

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引用次数: 0

摘要

通过对生长模式和线宽的控制，尝试在图像化的[001]InP衬底上选择性地生长InGaAs量子线(QWR)阵列。首先生长InGaAs脊结构阵列，然后提供InAlAs/InGaAs/InAlAs层，通过自组织方式生长QWR阵列。通过结合低V/III比下ga稳定的平顶生长模式和As稳定的尖顶生长模式来生长InGaAs脊结构，消除了初始图案的不均匀性，实现了低于单原子阶跃水平的脊粗糙度。在严格的线宽控制下，形成了高度均匀的窄箭头InGaAs QWR阵列，显示出强的PL发射，FWHM窄为19 meV。

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Control of growth mode and wire width in selective molecular beam epitaxy growth of InGaAs quantum wire arrays on InP [001] substrates

Control of the growth mode and the wire width were attempted for selective MBE growth of InGaAs quantum wire (QWR) arrays on patterned [001] InP substrates. InGaAs ridge structure arrays were grown first, and then InAlAs/InGaAs/InAlAs layers were supplied to grow QWR arrays by self-organization. By combining a Ga-stabilized flat-top growth mode and an As stabilized sharp-top growth mode under low V/III ratios for InGaAs ridge structure growth, initial pattern non-uniformity was removed, achieving ridge roughness below a monoatomic step level. Highly uniform and narrow arrow-headed InGaAs QWR arrays were formed under a tight wire width control, showing strong PL emission with a narrow FWHM of 19 meV.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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