Molecular beam epitaxial growth and characterization of In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures on InP substrates

Abstract

In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures were grown on InP substrates by molecular beam epitaxy. Exciton peaks were observed at 300 K for InGaAsSb/InAlAs strained multiple quantum well (MQW) structures with the Sb mole fraction up to 0.11. The photoluminescence (PL) intensity of the strained MQW structures is comparable to that of an InGaAs/InAlAs MQW structure lattice-matched to InP substrate. A strong emission at 2.08 /spl mu/m was observed at 11 K for InGaAsSb/InAlAs strained single quantum well (SQW) structure.