[100] InP上生长的InAs自组装量子点激光器

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014493

P. Poole, C. Allen, P. Marshall, J. Fraser, S. Moisa, S. Raymond, S. Fafard

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引用次数: 6

摘要

在[100]InP衬底上生长了包含五层叠置InAs量子点(QDs)的量子点激光器。QD系综的密度为1.5 /spl倍/ 10/sup 10/ cm/sup -2/，在77 K时发出的光为/spl sim/1.6 /spl mu/m。当栅极尺寸为2000 /spl mu/m /spl倍/ 150 /spl mu/m时，激光波长和阈值电流密度可通过改变激光二极管的腔长而发生变化，在77 K时，阈值电流密度可低至49 a /cm/sup 2/。观察到阈值电流的温度依赖性，这意味着热离子发射的存在随着温度的升高而增加。

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InAs self-assembled quantum dot lasers grown on [100] InP

Quantum dot lasers containing five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on [100] InP substrates. The QD ensemble has a density of 1.5 /spl times/ 10/sup 10/ cm/sup -2/ and emits light at /spl sim/1.6 /spl mu/m at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm/sup 2/ at 77 K for a gate size of 2000 /spl mu/m /spl times/ 150 /spl mu/m. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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