基于inp异质结构的二维光子晶体波导的制备与表征

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014456

M. Mulot, S. Anand, M. Swillo, M. Qiu, B. Jaskorzyńska, A. Talneau

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引用次数: 2

摘要

利用Ar/Cl/sub - 2/基化学辅助离子束刻蚀(CAIBE)技术在InP/GaAsInP/InP中实现了低损耗光子晶体(PCs)。通过优化蚀刻参数，使物理和化学成分平衡，我们成功地获得了深度超过2 /spl μ m /m的孔，即使孔直径只有220 nm。以PC波导模隙的形状和位置为评价工具，比较了两种不同工艺条件下的PC刻蚀质量。采用优化工艺刻蚀的PC波导的损耗参数/spl epsiv/”小至0.18，对应于实验确定的W3 PC波导损耗为1 dB/100 /spl mu/m。

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Fabrication and characterization of two-dimensional photonic crystal waveguides etched in InP-based heterostructure

We demonstrate low-loss photonic-crystals (PCs) realized in InP/GaAsInP/InP by Ar/Cl/sub 2/ based Chemically Assisted Ion Beam Etching (CAIBE). By optimizing the etching parameters so that the physical and the chemical components are balanced, we succeed in obtaining holes deeper than 2 /spl mu/m even for a hole diameter as small as 220 nm. The quality of PCs etched in two different process conditions is compared by using the shape and the position of mode-gaps in PC waveguides as an assessment tool. PCs etched with an optimized process exhibit a loss parameter /spl epsiv/" as small as 0.18, which corresponds to a experimentally determined loss of 1 dB/100 /spl mu/m in W3 PC waveguides.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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