InP系统上的自组装量子脉冲激光器

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014621

R. Schwertberger, D. Gold, J. Reithmaier, A. Forchel

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引用次数: 4

摘要

采用气体源分子束外延的方法，利用v族前驱体TBA和TBP，在固态砷的基础上，制备了自组装InAs的InP体系上的量子冲刺激光器。通过光致发光和扫描电镜测量，研究了生长温度、缓冲层等生长参数对划痕形成的影响。仅通过改变量子划线层厚度，激光器覆盖的波长范围从1.55到1.78 /spl mu/m不等。在室温下，输出功率与注入电流的关系显示出良好的透明阈值电流密度，低于900 a /cm/sup 2/。其热学特性，特别是发射波长随温度的低位移特性，为实现通信应用提供了良好的前景。

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Self-assembled quantum-dash lasers on the InP system

Quantum dash lasers on the InP system with self-assembled InAs dashes were grown by gas source molecular beam epitaxy using the alternative group-V-precursors TBA and TBP additionally to solid-state arsenic. Studies of the influence of several growth parameters on the dash formation like growth temperature, buffer layer etc. were done by photoluminescence and scanning electron microscopy measurements. The lasers cover a large wavelength range from 1.55 to 1.78 /spl mu/m just by varying the quantum dash layer thickness. Output power versus injection current shows a good transparency threshold current density below 900 A/cm/sup 2/ at room temperature. The thermal properties especially the low shift of the emission wavelength with the temperature are very promising for the realization of telecommunication applications.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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