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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)最新文献

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Efficient, narrow linewidth emission from InGaAs/AlGaAs V-groove quantum wire light-emitting diodes InGaAs/AlGaAs v型槽量子线发光二极管的高效窄线宽发射
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014619
H. Weman, L. Sirigu, K. Leifer, K. Karlsson, A. Rudra, E. Kapon
{"title":"Efficient, narrow linewidth emission from InGaAs/AlGaAs V-groove quantum wire light-emitting diodes","authors":"H. Weman, L. Sirigu, K. Leifer, K. Karlsson, A. Rudra, E. Kapon","doi":"10.1109/ICIPRM.2002.1014619","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014619","url":null,"abstract":"We have succeeded to achieve highly efficient, narrow linewidth electroluminescence (EL) at room temperature from strained InGaAs quantum wire (QWR) light-emitting diodes (LEDs). The internal quantum efficiency is estimated to be as high as 60% for a single layer, 500-nm-pitch V-groove In/sub 0.15/Ga/sub 0.85/As QWR array LED, emitting at 1.29 eV (/spl lambda/ = 960 nm) with a linewidth as narrow as 14 meV. The high efficiency is achieved with the aid of selective carrier injection directly into the QWRs through self-ordered AlGaAs vertical quantum wells (VQWs), where the VQWs were separated from the InGaAs QWRs by thin GaAs spacer layers in order to reduce nonradiative recombination and inhomogeneous alloy broadening.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114355938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization and assessment of shape, alignment, and structure of InP/InGaAsP waveguide vertically coupled optical add-drop multiplexers InP/InGaAsP波导垂直耦合光加降多路复用器的形状、对准和结构优化与评估
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014151
M. Raburn, K. Rauscher, Y. Okuno, N. Dagli, J. Bowers
{"title":"Optimization and assessment of shape, alignment, and structure of InP/InGaAsP waveguide vertically coupled optical add-drop multiplexers","authors":"M. Raburn, K. Rauscher, Y. Okuno, N. Dagli, J. Bowers","doi":"10.1109/ICIPRM.2002.1014151","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014151","url":null,"abstract":"An investigation of optimal waveguide layout shapes for vertically-coupled, wafer-bonded InP/InGaAsP optical add-drop multiplexers has been performed through integration of the coupled-mode Ricatti equation, providing potential sidelobe levels of less than -32 dB and filter bandwidths over 20% narrower than those of previous devices. Effects of nonideal processing conditions on filter performance are analyzed as well.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127683174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RF and microwave noise modeling of AlInAs/GaInAs/InP HFETs AlInAs/GaInAs/InP高频场效应管的射频和微波噪声建模
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014363
P. Sakalas, A. Mellberg, H. Zirath, N. Rorsman, E. Choumas
{"title":"RF and microwave noise modeling of AlInAs/GaInAs/InP HFETs","authors":"P. Sakalas, A. Mellberg, H. Zirath, N. Rorsman, E. Choumas","doi":"10.1109/ICIPRM.2002.1014363","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014363","url":null,"abstract":"AlInAs/GaInAs/InP HEMTs were fabricated on a lattice-matched structure, grown by molecular beam epitaxy. An extrinsic transconductance of a g/sub m/=840 mS/mm was obtained at a drain current of 210 mA/mm. RF and microwave noise performance of InP HFETs were investigated in the 2-26 GHz frequency band. Small-signal model parameters were extracted by using the \"cold\" FET method. AlInAs/GaInAs/InP HEMTs exhibited good RF and noise performance, (f/sub t/=118 GHz, f/sub max/=245 GHz and NFmin=0.4 dB at 2 GHz and NFmin=1.3 dB at 26 GHz). The Pospieszalski noise model in association with a current noise source due to the gate leakage was exploited to account for the measured noise parameters. The good noise characteristics in AlInAs/GaInAs/InP HEMTs can be explained by the low gate resistance and by the suppression of real space transport at the bias of transistor operation due to confinement of electrons in the wide quantum well (300 /spl Aring/) channel. Simulated results gave an error within less than 4%.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115784102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxially thin InP Schottky diodes for micromachined polymer membrane-on-silicon coplanar waveguides 外延薄InP肖特基二极管用于微机械聚合物膜硅共面波导
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014316
V. Avramescu, K. Hjort
{"title":"Epitaxially thin InP Schottky diodes for micromachined polymer membrane-on-silicon coplanar waveguides","authors":"V. Avramescu, K. Hjort","doi":"10.1109/ICIPRM.2002.1014316","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014316","url":null,"abstract":"A new method has been developed to integrate III-V electronic devices into a coplanar waveguide silicon technology. InP dices with an ohmic contact and metal conductor layer are glued to a BCB polymer layer on silicon by using a not fully cured resist and applying pick-'n'-place positioning. An etch stop technique is used to obtain. the epilayer diodes (less than 2 /spl mu/m thick). The Schottky contact is realised with Cr-Au through BCB patterning.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131095255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pico-second passively mode locked surface-emitting laser with self-assembled semiconductor quantum dot absorber 具有自组装半导体量子点吸收体的皮秒被动锁模表面发射激光器
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014389
A. Garnache, S. Hoogland, A. Tropper, J. Gerard, V. Thierry-mieg, J. Roberts
{"title":"Pico-second passively mode locked surface-emitting laser with self-assembled semiconductor quantum dot absorber","authors":"A. Garnache, S. Hoogland, A. Tropper, J. Gerard, V. Thierry-mieg, J. Roberts","doi":"10.1109/ICIPRM.2002.1014389","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014389","url":null,"abstract":"Diode-pumped quantum-well vertical-external-cavity surface-emitting lasers (DP-VECSELs) have generated high average powers with circular diffraction-limited output beams, and short pulse operation. In this type of semiconductor laser, which is simple to manufacture, both the beam quality limitations of edge-emitting diode lasers and the power restrictions of electrically pumped surface-emitting lasers are overcome. It also does not require wavelength stabilization of the pump source, compared to solid-state laser systems. The laser mode area on the chip can be /spl sim/10/sup 4/ times larger than the one on the facet of an edge-emitting laser, offering scope for the generation of high average power and large pulse energy. The relatively small gain saturation fluence of quantum-well lasers implies that they can be passively mode-locked at repetition rates of several gigahertz with no tendency to Q-switching. Pulsed semiconductor lasers do not generally use the broad gain bandwidth to full advantage in the generation of picosecond pulses.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115208613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Influence of phosphorus on undoped and zinc doped InGaAs 磷对未掺杂和锌掺杂InGaAs的影响
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014325
L. B. Karlina, B. Ber, P. A. Blagnov, A. M. Boĭko, M. Kulagina, A. Vlasov
{"title":"Influence of phosphorus on undoped and zinc doped InGaAs","authors":"L. B. Karlina, B. Ber, P. A. Blagnov, A. M. Boĭko, M. Kulagina, A. Vlasov","doi":"10.1109/ICIPRM.2002.1014325","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014325","url":null,"abstract":"Simultaneous diffusion of P and Zn in In/sub 0.53/Ga/sub 0.47/As using Sn-InP-Zn as a dopant source is investigated. The dependence of the diffusion profiles Zn and P on diffusion time at 600/spl deg/C is presented. Typical zinc concentration and depths obtained are 10*/sup 19/ cm/sup -3/ and 0.5-1.3 /spl mu/m. The incorporation of P into InGaAs at almost constant concentration for layers of 3-/spl mu/m thickness was detected. The effects of the exposure of InGaAs to 1 MeV electron fluence 10/sup 15/, 10/sup 16/ cm/sup -2/ were investigated by photoluminescence and Raman scattering. Results presented here show a slight increase in PL emission after irradiation InGaAs (Zn, P) by fluence of 10/sup 15/ cm/sup -2/. The free carrier concentration remains at the same level before and after irradiation.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114350169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Vacancy-type defects in GaAsN grown by metalorganic vapor phase epitaxy 金属有机气相外延生长GaAsN中的空位型缺陷
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014345
J. Toivonen, J. Oila, K. Saarinen, T. Hakkarainen, M. Sopanen, H. Lipsanen
{"title":"Vacancy-type defects in GaAsN grown by metalorganic vapor phase epitaxy","authors":"J. Toivonen, J. Oila, K. Saarinen, T. Hakkarainen, M. Sopanen, H. Lipsanen","doi":"10.1109/ICIPRM.2002.1014345","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014345","url":null,"abstract":"Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers grown by metalorganic vapor phase epitaxy using dimethylhydrazine as a nitrogen source. A clear signal of vacancies in the GaAsN epilayer was found and a rapid increase in density of the vacancies was observed with increasing nitrogen composition. We propose these vacancies to be Ga vacancies in defect complexes.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"372 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115985879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Band gap reduction in InAsN alloy InAsN合金带隙的减小
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014351
T. Chu, Hao-Hsiung Lin, D. Shih
{"title":"Band gap reduction in InAsN alloy","authors":"T. Chu, Hao-Hsiung Lin, D. Shih","doi":"10.1109/ICIPRM.2002.1014351","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014351","url":null,"abstract":"We report the absorption and photoluminescence (PL) properties of InAsN alloys grown by gas source molecular beam epitaxy. A calculation based on the band anticrossing model was used to evaluate the Burstein-Moss effect and the band renormalization effect due to the high residual carrier density in the alloy and also the original band gap energy. It can be seen from our calculation that the broad linewidths of the PL spectra are due to the Burstein-Moss effect, and the high-energy edges of these spectra are consistent with the results from absorption measurements. The low-energy edges of PL spectra are also shown to be close to the calculated original band gap energy.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123442259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InP HEMT and HBT applications beyond 200 GHz 超过200 GHz的HEMT和HBT应用
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014077
D. Streit, R. Lai, A. Oki, A. Gutierrez-Aitken
{"title":"InP HEMT and HBT applications beyond 200 GHz","authors":"D. Streit, R. Lai, A. Oki, A. Gutierrez-Aitken","doi":"10.1109/ICIPRM.2002.1014077","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014077","url":null,"abstract":"InP HEMT and InP HBT offer significant performance advantages for applications that range from microwave and millimeter-wave to fast digital and optoelectronic circuits. The improved transport characteristics, high transconductance, and optical integration properties of these devices hold great benefit for wireless and fiber-optic communications, radar, passive imaging and radiometer systems. We present an overview of recent results for InP devices and integrated circuits, including the current status of TRW's InP HEMT and HBT device and MMIC performance. The migration to new materials and process technology will enable volume production capability for high-performance applications to 200 GHz and beyond.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"226 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116838983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
Self-excited Raman scattering by intersubband transition in AlGaInP/InGaP quantum well lasers at 300 K 300 K时AlGaInP/InGaP量子阱激光器子带间跃迁的自激拉曼散射
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014631
W. Susaki, T. Uetsuji, K. Nishikawa, X. Gao, N. Ohno, T. Yagi, E. Oomura
{"title":"Self-excited Raman scattering by intersubband transition in AlGaInP/InGaP quantum well lasers at 300 K","authors":"W. Susaki, T. Uetsuji, K. Nishikawa, X. Gao, N. Ohno, T. Yagi, E. Oomura","doi":"10.1109/ICIPRM.2002.1014631","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014631","url":null,"abstract":"Efficient self-excited electron and phonon Raman scattering spectra are observed above threshold in 0.68/spl mu/m-AlGaInP/InGaP quantum well lasers at room temperature. They are assigned to electron intersubband transitions between the first and the second subbands in the quantum well accompanied with longitudinal optical phonon scattering.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"247 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124714531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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