Influence of phosphorus on undoped and zinc doped InGaAs

Abstract

Simultaneous diffusion of P and Zn in In/sub 0.53/Ga/sub 0.47/As using Sn-InP-Zn as a dopant source is investigated. The dependence of the diffusion profiles Zn and P on diffusion time at 600/spl deg/C is presented. Typical zinc concentration and depths obtained are 10*/sup 19/ cm/sup -3/ and 0.5-1.3 /spl mu/m. The incorporation of P into InGaAs at almost constant concentration for layers of 3-/spl mu/m thickness was detected. The effects of the exposure of InGaAs to 1 MeV electron fluence 10/sup 15/, 10/sup 16/ cm/sup -2/ were investigated by photoluminescence and Raman scattering. Results presented here show a slight increase in PL emission after irradiation InGaAs (Zn, P) by fluence of 10/sup 15/ cm/sup -2/. The free carrier concentration remains at the same level before and after irradiation.