300 K时AlGaInP/InGaP量子阱激光器子带间跃迁的自激拉曼散射

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014631

W. Susaki, T. Uetsuji, K. Nishikawa, X. Gao, N. Ohno, T. Yagi, E. Oomura

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摘要

在室温下，0.68/spl mu/m-AlGaInP/InGaP量子阱激光器的自激电子和声子拉曼散射光谱高于阈值。它们被分配到量子阱中伴随纵向光学声子散射的第一和第二子带之间的电子子带间跃迁。

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Self-excited Raman scattering by intersubband transition in AlGaInP/InGaP quantum well lasers at 300 K

Efficient self-excited electron and phonon Raman scattering spectra are observed above threshold in 0.68/spl mu/m-AlGaInP/InGaP quantum well lasers at room temperature. They are assigned to electron intersubband transitions between the first and the second subbands in the quantum well accompanied with longitudinal optical phonon scattering.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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