金属有机气相外延生长GaAsN中的空位型缺陷

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014345

J. Toivonen, J. Oila, K. Saarinen, T. Hakkarainen, M. Sopanen, H. Lipsanen

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引用次数: 1

摘要

采用正电子湮没光谱研究了以二甲基肼为氮源，金属有机气相外延生长的GaAsN/GaAs薄膜。在GaAsN薄膜中发现了明显的空位信号，并且随着氮组成的增加，空位密度迅速增加。我们认为这些空位是缺陷配合物中的Ga空位。

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Vacancy-type defects in GaAsN grown by metalorganic vapor phase epitaxy

Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers grown by metalorganic vapor phase epitaxy using dimethylhydrazine as a nitrogen source. A clear signal of vacancies in the GaAsN epilayer was found and a rapid increase in density of the vacancies was observed with increasing nitrogen composition. We propose these vacancies to be Ga vacancies in defect complexes.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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