Vacancy-type defects in GaAsN grown by metalorganic vapor phase epitaxy

Abstract

Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers grown by metalorganic vapor phase epitaxy using dimethylhydrazine as a nitrogen source. A clear signal of vacancies in the GaAsN epilayer was found and a rapid increase in density of the vacancies was observed with increasing nitrogen composition. We propose these vacancies to be Ga vacancies in defect complexes.