超过200 GHz的HEMT和HBT应用

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014077

D. Streit, R. Lai, A. Oki, A. Gutierrez-Aitken

{"title":"超过200 GHz的HEMT和HBT应用","authors":"D. Streit, R. Lai, A. Oki, A. Gutierrez-Aitken","doi":"10.1109/ICIPRM.2002.1014077","DOIUrl":null,"url":null,"abstract":"InP HEMT and InP HBT offer significant performance advantages for applications that range from microwave and millimeter-wave to fast digital and optoelectronic circuits. The improved transport characteristics, high transconductance, and optical integration properties of these devices hold great benefit for wireless and fiber-optic communications, radar, passive imaging and radiometer systems. We present an overview of recent results for InP devices and integrated circuits, including the current status of TRW's InP HEMT and HBT device and MMIC performance. The migration to new materials and process technology will enable volume production capability for high-performance applications to 200 GHz and beyond.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"226 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"InP HEMT and HBT applications beyond 200 GHz\",\"authors\":\"D. Streit, R. Lai, A. Oki, A. Gutierrez-Aitken\",\"doi\":\"10.1109/ICIPRM.2002.1014077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InP HEMT and InP HBT offer significant performance advantages for applications that range from microwave and millimeter-wave to fast digital and optoelectronic circuits. The improved transport characteristics, high transconductance, and optical integration properties of these devices hold great benefit for wireless and fiber-optic communications, radar, passive imaging and radiometer systems. We present an overview of recent results for InP devices and integrated circuits, including the current status of TRW's InP HEMT and HBT device and MMIC performance. The migration to new materials and process technology will enable volume production capability for high-performance applications to 200 GHz and beyond.\",\"PeriodicalId\":145425,\"journal\":{\"name\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"volume\":\"226 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2002.1014077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2002.1014077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 28

摘要

InP HEMT和InP HBT为从微波和毫米波到快速数字和光电子电路的应用提供了显着的性能优势。这些器件改进的传输特性、高跨导性和光学集成特性对无线和光纤通信、雷达、被动成像和辐射计系统有很大的好处。我们概述了InP器件和集成电路的最新成果，包括天合的InP HEMT和HBT器件以及MMIC性能的现状。向新材料和工艺技术的迁移将使200 GHz及以上高性能应用的批量生产能力成为可能。

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InP HEMT and HBT applications beyond 200 GHz

InP HEMT and InP HBT offer significant performance advantages for applications that range from microwave and millimeter-wave to fast digital and optoelectronic circuits. The improved transport characteristics, high transconductance, and optical integration properties of these devices hold great benefit for wireless and fiber-optic communications, radar, passive imaging and radiometer systems. We present an overview of recent results for InP devices and integrated circuits, including the current status of TRW's InP HEMT and HBT device and MMIC performance. The migration to new materials and process technology will enable volume production capability for high-performance applications to 200 GHz and beyond.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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