Epitaxially thin InP Schottky diodes for micromachined polymer membrane-on-silicon coplanar waveguides

Abstract

A new method has been developed to integrate III-V electronic devices into a coplanar waveguide silicon technology. InP dices with an ohmic contact and metal conductor layer are glued to a BCB polymer layer on silicon by using a not fully cured resist and applying pick-'n'-place positioning. An etch stop technique is used to obtain. the epilayer diodes (less than 2 /spl mu/m thick). The Schottky contact is realised with Cr-Au through BCB patterning.