外延薄InP肖特基二极管用于微机械聚合物膜硅共面波导

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014316

V. Avramescu, K. Hjort

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引用次数: 0

摘要

开发了一种将III-V电子器件集成到共面波导硅技术中的新方法。具有欧姆接触和金属导体层的InP器件通过使用未完全固化的抗蚀剂和应用拾取'n'位定位，粘在硅上的BCB聚合物层上。蚀刻停止技术被用来获得。脱毛层二极管(小于2 /spl mu/m厚)。Cr-Au的肖特基接触是通过BCB图案化实现的。

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Epitaxially thin InP Schottky diodes for micromachined polymer membrane-on-silicon coplanar waveguides

A new method has been developed to integrate III-V electronic devices into a coplanar waveguide silicon technology. InP dices with an ohmic contact and metal conductor layer are glued to a BCB polymer layer on silicon by using a not fully cured resist and applying pick-'n'-place positioning. An etch stop technique is used to obtain. the epilayer diodes (less than 2 /spl mu/m thick). The Schottky contact is realised with Cr-Au through BCB patterning.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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