发布求助
文献互助 智能选刊 最新文献

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)最新文献

筛选
英文 中文
Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design 利用新的基板设计降低InP/InGaAs shbt的外部基集电极电容
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014290
YongJoo Song, Kyounghoon Yang
{"title":"Reduction of extrinsic base-collector capacitance in InP/InGaAs SHBTs using a new base pad design","authors":"YongJoo Song, Kyounghoon Yang","doi":"10.1109/ICIPRM.2002.1014290","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014290","url":null,"abstract":"A method to isolate the base pad from the intrinsic device structure for reducing the extrinsic base-collector capacitance of InP/InGaAs single heterojunction bipolar transistors(SHBTs) is reported, which uses a new base pad layout. The new layout is designed based on the lateral etching characteristics of an InGaAs collector layer with different crystal orientations. The new layout allows more effective and easier base pad isolation for InP-based HBTs, which have the emitter aligned to [011] or [011~] directions, without excessive lateral or additional etching. The maximum f/sub T/ and f/sub max/ of the fabricated device with a 2 /spl times/ 10 /spl mu/m/sup 2/ emitter size using the new layout were found to be 72 and 242 GHz, respectively.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128532620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
InP-based fine-structuring techniques for photonic devices 光子器件中基于inp的精细结构技术
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014460
S. Arai
{"title":"InP-based fine-structuring techniques for photonic devices","authors":"S. Arai","doi":"10.1109/ICIPRM.2002.1014460","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014460","url":null,"abstract":"Recent progress in dry etching technologies enabled realizations of ultra-fine-structures with superior verticality with a high aspect ratio. We applied a reactive-ion-etching (RIE) using a CH/sub 4//H/sub 2/ mixture gas to GaInAsP/InP compound system which is widely used in photonic devices for wideband optical fiber communications, and realized new types of lasers for high performance operation, such as semiconductor/Benzocyclobutene (BCB) distributed Bragg reflector (DBR) lasers and vertical grating distributed feedback (VG-DFB) lasers consisting of a grating formed on the sidewalls of the stripe mesa. Furthermore, a distributed reflector (DR) laser consisting of the VG-DFB region integrated with the semiconductor/BCB DBR as the rear side reflector was realized for high output efficiency operation from the front facet. In this paper, we summarize present status and future prospects of these fine-structuring techniques based on GaInAsP/InP compound for long wavelength photonic devices.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127471330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack 基于wsin栅极堆的InP hemt的氢敏感性
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014397
S. Mertens, J. D. del Alamo, T. Suemitsu, T. Enoki
{"title":"Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack","authors":"S. Mertens, J. D. del Alamo, T. Suemitsu, T. Enoki","doi":"10.1109/ICIPRM.2002.1014397","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014397","url":null,"abstract":"We have investigated the hydrogen sensitivity of InP HEMTs with a WSiN/Ti/Pt/Au gate stack. We have found that the impact of hydrogen on the threshold voltage of these devices is one order of magnitude smaller than conventional Ti/Pt/Au-gate HEMTs. This markedly improved reliability has been studied through a set of quasi-2D mechanical and electrostatic simulations. These showed that there are two main causes for the improvement of the H-sensitivity. First, the separation of the Ti-layer from the semiconductor by a thick WSiN layer significantly reduces the stress in the active layer. Additionally, the thinner heterostructure and the presence of an InP etch-stop layer with a small piezoelectric constant underneath the gate reduces the amount of threshold voltage shift that is caused by the mechanical stress.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129011920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ultrafast processes in quantum dot devices 量子点器件中的超快过程
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014104
P. Borri, W. Langbein, S. Schneider, U. Woggon, R. Sellin, D. Ouyang, D. Bimberg
{"title":"Ultrafast processes in quantum dot devices","authors":"P. Borri, W. Langbein, S. Schneider, U. Woggon, R. Sellin, D. Ouyang, D. Bimberg","doi":"10.1109/ICIPRM.2002.1014104","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014104","url":null,"abstract":"The dephasing time and the population relaxation dynamics of the excitonic ground-state transitions in an electrically-pumped semiconductor optical amplifier containing InGaAs/GaAs quantum dots as active medium are measured at 10K using a highly sensitive heterodyne technique. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129132180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-/spl mu/m laser applications 1.3-/spl mu/m激光应用中movpe生长GaInNAs/GaAs量子阱的优化
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014504
C. Asplund, P. Sundgren, M. Hammar
{"title":"Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-/spl mu/m laser applications","authors":"C. Asplund, P. Sundgren, M. Hammar","doi":"10.1109/ICIPRM.2002.1014504","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014504","url":null,"abstract":"The effects of high group-V precursor flows during metal-organic vapor phase epitaxial growth of GaInNAs QWs are investigated. It is shown that photoluminescence line width, wafer uniformity, and sensitivity to growth temperature can be improved using V/III ratios in excess of 2000. Broad area GaInNAs/GaAs SQW lasers with dimensions 100 /spl times/ 820 /spl mu/m/sup 2/ grown under these conditions have threshold current densities as low as 660 kA/cm at 1.26 /spl mu/m emission wavelength.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130424304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical absorption by dislocations in strongly mismatched InP and GaAs on silicon 硅上强错配InP和GaAs的位错光学吸收
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014473
E. Peiner
{"title":"Optical absorption by dislocations in strongly mismatched InP and GaAs on silicon","authors":"E. Peiner","doi":"10.1109/ICIPRM.2002.1014473","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014473","url":null,"abstract":"The effect of dislocations on optical absorption in thin InP and GaAs epitaxial layers on silicon was investigated. Modeling was performed based on the electric field generated by charged states at the dislocation core. The feasibility of optical spectroscopy was demonstrated for characterizing the quality of InP and GaAs layers fabricated by strongly mismatched heteroepitaxy on silicon.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126356646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor 高be掺杂InP/In/sub 0.53/Ga/sub 0.47/As异质结双极晶体管发射基突结优化
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014503
E. Lefebvre, M. Zaknoune, F. Mollot
{"title":"Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor","authors":"E. Lefebvre, M. Zaknoune, F. Mollot","doi":"10.1109/ICIPRM.2002.1014503","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014503","url":null,"abstract":"The optimisation of an abrupt emitter-base n-p junction for an InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor has been carried out for heavily Be-doped In/sub 0.53/Ga/sub 0.47/As, with Be concentration ranging from 4.4 /spl times/ 10/sup 19/ cm/sup -3/ to 1.2 /spl times/ 10/sup 20/ cm/sup -3/. The electrical conductivity continuously increases even for the highest Be concentrations. Beryllium diffusion and segregation are strongly reduced by lowering the MBE growth temperature to 400/spl deg/C and less. Combined with precise adjustment of the thickness of an undoped spacer layer, it leads to high quality emitter-base junctions. Nearly ideal emitter-base I-V characteristics have been obtained for a doping level around 1 /spl times/ 10/sup 20/ cm/sup -3/, allowing ultra-high frequency HBTs with a base width as thin as 20 nm.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126431241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-performance all-active tapered 1550 nm InGaAsP-BH-FP lasers 高性能全有源锥形1550 nm InGaAsP-BH-FP激光器
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014085
M. Mohrle, H. Roehle, A. Sigmund, A. Suna, F. Reier
{"title":"High-performance all-active tapered 1550 nm InGaAsP-BH-FP lasers","authors":"M. Mohrle, H. Roehle, A. Sigmund, A. Suna, F. Reier","doi":"10.1109/ICIPRM.2002.1014085","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014085","url":null,"abstract":"Large spot-size InGaAsP-BH-FP laser diodes using all-active tapered stripes have been investigated. Optimized 400 /spl mu/m long as-cleaved lasers show front facet CW output powers of more than 40 mW at 200 mA operation current, good high temperature behavior and a minimum coupling loss of -3.5 dB to a cleaved single-mode fiber.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114245120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
0.1 /spl mu/m InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band 0.1 /spl mu/m用于x波段至w波段低温低噪声放大器的InP HEMT器件和mmic
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014466
R. Grundbacher, R. Lai, M. Barsky, R. Tsai, T. Gaier, S. Weinreb, D. Dawson, J. Bautista, J.F. Davis, N. Erickson, T. Block, A. Oki
{"title":"0.1 /spl mu/m InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band","authors":"R. Grundbacher, R. Lai, M. Barsky, R. Tsai, T. Gaier, S. Weinreb, D. Dawson, J. Bautista, J.F. Davis, N. Erickson, T. Block, A. Oki","doi":"10.1109/ICIPRM.2002.1014466","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014466","url":null,"abstract":"We present the TRW 0.1 /spl mu/m InP HEMT MMIC production technology that has been developed and used for state-of-the-art cryogenic LNA applications. The 0.1 /spl mu/m InP HEMT devices typically show cutoff frequency above 200 GHz and transconductance above 1000 mS/mm. Aspects of device design and fabrication are presented which impact important parameters including the InP HEMT device gain, gate leakage current, and parasitic capacitance. One example of state-of-the-art cryogenic MMIC performance is a W-band cryogenic MMIC LNA operated at 20 degrees Kelvin that shows above 23 dB gain and a noise temperature of 30 to 40 K (0.45 to 0.6 dB noise figure) over the band of 80-105 GHz.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115259009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3 /spl mu/m and 1.55 /spl mu/m [lasers] 等离子体辅助分子束外延向1.3 /spl mu/m和1.55 /spl mu/m方向生长Ga(In)AsN[激光]
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014598
S. Wang, S. Yoon, T. K. Ng, W. Loke, Z.Z. Sun, K. Yew, W. Fan
{"title":"Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3 /spl mu/m and 1.55 /spl mu/m [lasers]","authors":"S. Wang, S. Yoon, T. K. Ng, W. Loke, Z.Z. Sun, K. Yew, W. Fan","doi":"10.1109/ICIPRM.2002.1014598","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014598","url":null,"abstract":"Ga(In)AsN is grown by molecular beam epitaxy using either a direct nitrogen beam or dispersive nitrogen radicals generated by a radio-frequency activated nitrogen source. The nitrogen incorporation shows a linear dependence on the RF power in a dispersive growth mode, contrasted to a saturated behavior in a direct growth mode. An additional indium flux causes a decrease in the nitrogen composition, an effect resulting from the increase in the growth rate. Quality Ga(In)AsN quantum wells were grown at 460/spl deg/C, with a photoluminescence emission close to 1.6 /spl mu/m. Also reported is a PL result amongst the best, as compared with the literature.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115307039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信