1.3-/spl mu/m激光应用中movpe生长GaInNAs/GaAs量子阱的优化

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014504

C. Asplund, P. Sundgren, M. Hammar

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引用次数: 2

摘要

研究了高v族前驱体流动对金属-有机气相外延生长GaInNAs量子阱的影响。结果表明，当V/III比大于2000时，光致发光线宽、晶圆均匀性和对生长温度的敏感性都得到了改善。在这些条件下生长的尺寸为100 /spl倍/ 820 /spl μ m/sup 2/的广域GaInNAs/GaAs SQW激光器在1.26 /spl μ m发射波长下的阈值电流密度低至660 kA/cm。

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Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-/spl mu/m laser applications

The effects of high group-V precursor flows during metal-organic vapor phase epitaxial growth of GaInNAs QWs are investigated. It is shown that photoluminescence line width, wafer uniformity, and sensitivity to growth temperature can be improved using V/III ratios in excess of 2000. Broad area GaInNAs/GaAs SQW lasers with dimensions 100 /spl times/ 820 /spl mu/m/sup 2/ grown under these conditions have threshold current densities as low as 660 kA/cm at 1.26 /spl mu/m emission wavelength.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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