高be掺杂InP/In/sub 0.53/Ga/sub 0.47/As异质结双极晶体管发射基突结优化

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014503

E. Lefebvre, M. Zaknoune, F. Mollot

{"title":"高be掺杂InP/In/sub 0.53/Ga/sub 0.47/As异质结双极晶体管发射基突结优化","authors":"E. Lefebvre, M. Zaknoune, F. Mollot","doi":"10.1109/ICIPRM.2002.1014503","DOIUrl":null,"url":null,"abstract":"The optimisation of an abrupt emitter-base n-p junction for an InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor has been carried out for heavily Be-doped In/sub 0.53/Ga/sub 0.47/As, with Be concentration ranging from 4.4 /spl times/ 10/sup 19/ cm/sup -3/ to 1.2 /spl times/ 10/sup 20/ cm/sup -3/. The electrical conductivity continuously increases even for the highest Be concentrations. Beryllium diffusion and segregation are strongly reduced by lowering the MBE growth temperature to 400/spl deg/C and less. Combined with precise adjustment of the thickness of an undoped spacer layer, it leads to high quality emitter-base junctions. Nearly ideal emitter-base I-V characteristics have been obtained for a doping level around 1 /spl times/ 10/sup 20/ cm/sup -3/, allowing ultra-high frequency HBTs with a base width as thin as 20 nm.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor\",\"authors\":\"E. Lefebvre, M. Zaknoune, F. Mollot\",\"doi\":\"10.1109/ICIPRM.2002.1014503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The optimisation of an abrupt emitter-base n-p junction for an InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor has been carried out for heavily Be-doped In/sub 0.53/Ga/sub 0.47/As, with Be concentration ranging from 4.4 /spl times/ 10/sup 19/ cm/sup -3/ to 1.2 /spl times/ 10/sup 20/ cm/sup -3/. The electrical conductivity continuously increases even for the highest Be concentrations. Beryllium diffusion and segregation are strongly reduced by lowering the MBE growth temperature to 400/spl deg/C and less. Combined with precise adjustment of the thickness of an undoped spacer layer, it leads to high quality emitter-base junctions. Nearly ideal emitter-base I-V characteristics have been obtained for a doping level around 1 /spl times/ 10/sup 20/ cm/sup -3/, allowing ultra-high frequency HBTs with a base width as thin as 20 nm.\",\"PeriodicalId\":145425,\"journal\":{\"name\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2002.1014503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2002.1014503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文对高Be掺杂In/sub 0.53/Ga/sub 0.47/As的InP/In/ In/sub 0.53/Ga/sub 0.47/As异质结双极晶体管的突变发射基n-p结进行了优化，Be浓度范围为4.4 /spl倍/ 10/sup 19/ cm/sup -3/至1.2 /spl倍/ 10/sup 20/ cm/sup -3/。即使在最高的Be浓度下，电导率也持续增加。将MBE生长温度降低到400℃以下，铍的扩散和偏析明显减少。结合对未掺杂间隔层厚度的精确调整，可获得高质量的发射极-基极结。在掺杂水平约为1 /spl倍/ 10/sup / 20/ cm/sup -3/的情况下，获得了近乎理想的发射基I-V特性，从而实现了基宽薄至20 nm的超高频HBTs。

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Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor

The optimisation of an abrupt emitter-base n-p junction for an InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor has been carried out for heavily Be-doped In/sub 0.53/Ga/sub 0.47/As, with Be concentration ranging from 4.4 /spl times/ 10/sup 19/ cm/sup -3/ to 1.2 /spl times/ 10/sup 20/ cm/sup -3/. The electrical conductivity continuously increases even for the highest Be concentrations. Beryllium diffusion and segregation are strongly reduced by lowering the MBE growth temperature to 400/spl deg/C and less. Combined with precise adjustment of the thickness of an undoped spacer layer, it leads to high quality emitter-base junctions. Nearly ideal emitter-base I-V characteristics have been obtained for a doping level around 1 /spl times/ 10/sup 20/ cm/sup -3/, allowing ultra-high frequency HBTs with a base width as thin as 20 nm.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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