Optical absorption by dislocations in strongly mismatched InP and GaAs on silicon

Abstract

The effect of dislocations on optical absorption in thin InP and GaAs epitaxial layers on silicon was investigated. Modeling was performed based on the electric field generated by charged states at the dislocation core. The feasibility of optical spectroscopy was demonstrated for characterizing the quality of InP and GaAs layers fabricated by strongly mismatched heteroepitaxy on silicon.