等离子体辅助分子束外延向1.3 /spl mu/m和1.55 /spl mu/m方向生长Ga(In)AsN[激光]

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014598

S. Wang, S. Yoon, T. K. Ng, W. Loke, Z.Z. Sun, K. Yew, W. Fan

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摘要

Ga(In)AsN是通过分子束外延生长的，使用直接氮束或由射频激活氮源产生的弥散氮自由基。在色散生长模式下，氮的掺入与射频功率呈线性关系，而在直接生长模式下则呈饱和状态。额外的铟通量导致氮组成的减少，这是由生长速率增加引起的效应。在460/spl℃条件下生长出优质的Ga(In)AsN量子阱，光致发光强度接近1.6 /spl mu/m。与文献相比，报告的PL结果也名列前茅。

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Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3 /spl mu/m and 1.55 /spl mu/m [lasers]

Ga(In)AsN is grown by molecular beam epitaxy using either a direct nitrogen beam or dispersive nitrogen radicals generated by a radio-frequency activated nitrogen source. The nitrogen incorporation shows a linear dependence on the RF power in a dispersive growth mode, contrasted to a saturated behavior in a direct growth mode. An additional indium flux causes a decrease in the nitrogen composition, an effect resulting from the increase in the growth rate. Quality Ga(In)AsN quantum wells were grown at 460/spl deg/C, with a photoluminescence emission close to 1.6 /spl mu/m. Also reported is a PL result amongst the best, as compared with the literature.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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