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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)最新文献

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InGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain 具有低导通电压和高电流增益的InGaP/GaAsSb/GaAs dhbt
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014291
B. Yan, C. C. Hsu, X.Q. Wang, Y. Bai, E. Yang
{"title":"InGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain","authors":"B. Yan, C. C. Hsu, X.Q. Wang, Y. Bai, E. Yang","doi":"10.1109/ICIPRM.2002.1014291","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014291","url":null,"abstract":"An InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. It features the use of a fully strained pseudomorphic GaAsSb (Sb composition: 10.4%) as the base layer and an InGaP layer as the emitter, which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 200 has been obtained from the InGaP/GaAsSb/GaAs DHBT, which is the highest value obtained from GaAsSb base GaAs-based HBTs. The turn-on voltage of the device is typically 0.914 V for the 10.4% Sb composition, which is 0.176 V lower than that of traditional InGaP/GaAs HBT. The results show that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"211 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116523096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Intersubband and interband optical absorption study of strain-compensated InGaAs-InGaP superlattices grown on GaAs GaAs上生长的应变补偿InGaAs-InGaP超晶格的亚带间和带间光学吸收研究
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014483
M. Semtsiv, G. G. Tarasov, H. Kissel, F. Eickemeyer, W. Masselink
{"title":"Intersubband and interband optical absorption study of strain-compensated InGaAs-InGaP superlattices grown on GaAs","authors":"M. Semtsiv, G. G. Tarasov, H. Kissel, F. Eickemeyer, W. Masselink","doi":"10.1109/ICIPRM.2002.1014483","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014483","url":null,"abstract":"Strain-compensated In/sub 0.32/Ga/sub 0.68/As-In/sub 0.32/Ga/sub 0.68/P superlattices have been grown on semiinsulating [001] GaAs substrates using gas-source molecular-beam epitaxy and their subband structures investigated. Both visible and mid-infrared optical transmission measurements were used to determine the energies of the 1e-2e transitions as a function of superlattice structure. The highest energy 1e-2e transition obtained is 218 meV, corresponding to a wavelength of 5.7 /spl mu/m. The conduction band offset between the strained In/sub 0.32/Ga/sub 0.68/As and In/sub 0.32/Ga/sub 0.68/P appears to lie between 400 and 500 meV.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133309684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InP-based HEMT technologies toward 100 Gbit/s ICs 面向100gbit /s ic的基于inp的HEMT技术
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014462
T. Enoki
{"title":"InP-based HEMT technologies toward 100 Gbit/s ICs","authors":"T. Enoki","doi":"10.1109/ICIPRM.2002.1014462","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014462","url":null,"abstract":"This paper describes HEMT IC technology developed at NTT for 50 Gbit/s ICs, which are the key components in 40 Gbit/s optical communications systems these days. We have successfully integrated state-of-the-art HEMTs and achieved stable operation of D-FFs at over 50 Gbit/s with high yield and uniformity. It also discusses the potential of the technology for achieving 100 Gbit/s-class ICs and clarifies the HEMT performance requirements. The target performance of HEMTs is a g/sub m/ of over 1.4 S/mm with an f/sub T/ of over 280 GHz. Scaling down of HEMTs and reducing their parasitic capacitance are the major issues in achieving 100 Gbit/s operations.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133836241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Multi-channel modulation in a DWDM monolithic photonic integrated circuit DWDM单片光子集成电路中的多通道调制
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014609
Y. Suzaki, K. Asaka, Y. Kawaguchi, S. Oku, Y. Noguchi, S. Kondo, R. Iga, H. Okamoto
{"title":"Multi-channel modulation in a DWDM monolithic photonic integrated circuit","authors":"Y. Suzaki, K. Asaka, Y. Kawaguchi, S. Oku, Y. Noguchi, S. Kondo, R. Iga, H. Okamoto","doi":"10.1109/ICIPRM.2002.1014609","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014609","url":null,"abstract":"We present a multi-channel modulation circuit monolithically integrated with one 25-GHz-spacing AWG for both MUX and DEMUX and eight channels of SOAs and EAMs. The circuit can generate individual optical signals for each DWDM channel with a high extinction ratio of >20 dB and loss compensation. The circuit size can be reduced to 15 /spl times/ 7 mm/sup 2/.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114382631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Selective area growth of InP on InP precoated silicon substrate by hydride vapor phase epitaxy 氢化物气相外延在InP预涂硅衬底上选择性生长InP的研究
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014410
Y. Sun, J. Napierala, S. Lourdudoss
{"title":"Selective area growth of InP on InP precoated silicon substrate by hydride vapor phase epitaxy","authors":"Y. Sun, J. Napierala, S. Lourdudoss","doi":"10.1109/ICIPRM.2002.1014410","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014410","url":null,"abstract":"Selective area growth of InP is carried out on an InP precoated [001] 2/spl deg/ off Si substrate in a low pressure hydride vapor phase epitaxy system under different gas phase supersaturation. Epitaxial lateral overgrowth can be formed on a Si/sub 3/N/sub 4/ mask under certain growth conditions, which has improved crystallographic quality of the InP seed layer. A crystallographic model is proposed to demonstrate the observed asymmetric growth profile of selective area growth.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123249964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High reliability of 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates 在3英寸InP衬底上实现0.07 /spl μ m伪晶InGaAs/InAlAs/InP HEMT mmic的高可靠性
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014426
Y. Chou, D. Leung, R. Lai, R. Grundbacher, M. Barsky, R. Tsai, D. Eng, M. Wojtowicz, M. Nishimoto, P. Liu, A. Oki, D. Streit
{"title":"High reliability of 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates","authors":"Y. Chou, D. Leung, R. Lai, R. Grundbacher, M. Barsky, R. Tsai, D. Eng, M. Wojtowicz, M. Nishimoto, P. Liu, A. Oki, D. Streit","doi":"10.1109/ICIPRM.2002.1014426","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014426","url":null,"abstract":"The high-reliability performance of G-band (180 GHz) MMIC amplifiers fabricated using 0.07 pm T-gate pseudomorphic InGaAs/InAlAs/InP HEMTs on 3-inch wafers is reported. Low noise amplifiers were life-tested at two-temperatures (T/sub 1/ = 200/spl deg/C and T/sub 2/ = 215/spl deg/C) and stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2/spl times/10/sup 6/ hours at a channel temperature of 125/spl deg/C. MTTF was determined by 2-temperature constant current stress using |/spl Delta/G/sub mp/| > 20% as the failure criteria. This is the first demonstration of the high reliability of 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on a 3-inch InP production process. This result demonstrates a robust 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT production technology for G-band applications.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124717976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Potential of on-line MOVPE reproducibility control of 1.3 /spl mu/m laser structures by optical in-situ measurements 光学原位测量在线控制1.3 /spl μ m激光结构MOVPE再现性的潜力
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014415
E. Steimetz, W. Ebert, B. Henninger, P. Wolfram, J. Zettler
{"title":"Potential of on-line MOVPE reproducibility control of 1.3 /spl mu/m laser structures by optical in-situ measurements","authors":"E. Steimetz, W. Ebert, B. Henninger, P. Wolfram, J. Zettler","doi":"10.1109/ICIPRM.2002.1014415","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014415","url":null,"abstract":"In order to establish a precise on-line control for the MOVPE growth of InP based materials by optical in-situ measurements, we investigated the basic relations between growth parameter changes and optical in-situ data. In Reflectance Anisotropy Spectroscopy (RAS) measurements for varying p- and n-type doping concentrations, the possibilities of an on-line doping concentration determination were investigated. Analysing the active region of a MQW (multi quantum well) laser, RAS turned out even to be sensitive to the composition of thin quantum wells. With the combination of Reflectance (R) and RAS during growth of complete InGaAsP based 1.3 /spl mu/m MQW laser structures, the first characteristic fingerprints of all growth steps were generated.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121738747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaAs PIN detectors for frequencies above 100 GHz 用于100 GHz以上频率的InGaAs PIN检测器
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014607
M. Agethen, D. Keiper, G. Janssen, A. Brennemann, P. Velling, C. van den Berg, R. Bertenburg
{"title":"InGaAs PIN detectors for frequencies above 100 GHz","authors":"M. Agethen, D. Keiper, G. Janssen, A. Brennemann, P. Velling, C. van den Berg, R. Bertenburg","doi":"10.1109/ICIPRM.2002.1014607","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014607","url":null,"abstract":"High-frequency vertical PIN detectors with highly p-type doped InGaAs basis layer were investigated. Reducing the PIN area and series resistance together with the thickness of the undoped drift region results in f3dB corner frequencies of up to 120 GHz. In addition, the vertical PIN concept reveals several advantages compared to waveguide PINs like the possibility to build two dimensional detector arrays and it is perfectly suited for monolithically integrated opto-electronic receiver ICs (OEIC). Further PIN and OEIC results will be presented.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123848436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Far infrared phonon spectroscopy of In/sub 1-x/Ga/sub x/As epilayers on InP[100] InP上In/sub - 1-x/Ga/sub -x/ As涂层的远红外声子光谱[100]
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014475
N. Rowell, D. J. Lockwood, P. Poole, G. Yu, H. Shin
{"title":"Far infrared phonon spectroscopy of In/sub 1-x/Ga/sub x/As epilayers on InP[100]","authors":"N. Rowell, D. J. Lockwood, P. Poole, G. Yu, H. Shin","doi":"10.1109/ICIPRM.2002.1014475","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014475","url":null,"abstract":"Polarized far infrared reflectance was measured at oblique incidence for a large number of strained In/sub 1-x/Ga/sub x/As epilayers grown on InP wafers. From these measurements the concentration dependence of the zone-center optical phonon frequencies has been obtained for strained In/sub 1-x/Ga/sub x/As epilayers grown by chemical beam epitaxy on InP[100]. With the method used the reflectance spectra contain sharp Berreman peaks precisely at the optical phonon frequencies. To resolve the contributions of the individual phonon modes, curve fitting of the measured spectra was used. With this analysis it was observed that the modes included GaAs-like longitudinal and transverse optic (LO and TO), a disorder induced (TO-like), and InAs-like LO and TO phonons. The concentration dependence of these phonon frequencies, determined for 0.31","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125566455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
4-inch InP crystals grown by phosphorous vapor controlled LEC method 磷气控LEC法生长4英寸InP晶体
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014451
A. Noda, K. Suzuki, A. Arakawa, H. Kurita, R. Hirano
{"title":"4-inch InP crystals grown by phosphorous vapor controlled LEC method","authors":"A. Noda, K. Suzuki, A. Arakawa, H. Kurita, R. Hirano","doi":"10.1109/ICIPRM.2002.1014451","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014451","url":null,"abstract":"4-inch Fe doped and S doped InP crystals have been grown by phosphorous vapor controlled LEC method (PC-LEC). By controlling the solid / liquid (SL) interface shape, the dislocation density of S doped InP crystals was reduced to less than 3 /spl times/ 10/sup 3/ cm/sup -2/ for the whole ingot. The dislocation density of 4 inch Fe doped InP crystals was less than 5 /spl times/ 10/sup 4/ cm/sup -2/. The total thickness variation (TTV) of 4-inch substrates was improved by optimizing the polishing conditions. The minimum TTV was about 1.6 micrometer. There was no significant difference in breakage strength between 4-inch and 3-inch Fe doped InP substrates.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125668210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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