磷气控LEC法生长4英寸InP晶体

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014451

A. Noda, K. Suzuki, A. Arakawa, H. Kurita, R. Hirano

{"title":"磷气控LEC法生长4英寸InP晶体","authors":"A. Noda, K. Suzuki, A. Arakawa, H. Kurita, R. Hirano","doi":"10.1109/ICIPRM.2002.1014451","DOIUrl":null,"url":null,"abstract":"4-inch Fe doped and S doped InP crystals have been grown by phosphorous vapor controlled LEC method (PC-LEC). By controlling the solid / liquid (SL) interface shape, the dislocation density of S doped InP crystals was reduced to less than 3 /spl times/ 10/sup 3/ cm/sup -2/ for the whole ingot. The dislocation density of 4 inch Fe doped InP crystals was less than 5 /spl times/ 10/sup 4/ cm/sup -2/. The total thickness variation (TTV) of 4-inch substrates was improved by optimizing the polishing conditions. The minimum TTV was about 1.6 micrometer. There was no significant difference in breakage strength between 4-inch and 3-inch Fe doped InP substrates.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"4-inch InP crystals grown by phosphorous vapor controlled LEC method\",\"authors\":\"A. Noda, K. Suzuki, A. Arakawa, H. Kurita, R. Hirano\",\"doi\":\"10.1109/ICIPRM.2002.1014451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"4-inch Fe doped and S doped InP crystals have been grown by phosphorous vapor controlled LEC method (PC-LEC). By controlling the solid / liquid (SL) interface shape, the dislocation density of S doped InP crystals was reduced to less than 3 /spl times/ 10/sup 3/ cm/sup -2/ for the whole ingot. The dislocation density of 4 inch Fe doped InP crystals was less than 5 /spl times/ 10/sup 4/ cm/sup -2/. The total thickness variation (TTV) of 4-inch substrates was improved by optimizing the polishing conditions. The minimum TTV was about 1.6 micrometer. There was no significant difference in breakage strength between 4-inch and 3-inch Fe doped InP substrates.\",\"PeriodicalId\":145425,\"journal\":{\"name\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2002.1014451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2002.1014451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用磷气控LEC法(PC-LEC)制备了4英寸掺铁和掺S的InP晶体。通过控制固/液(SL)界面形状，使掺S InP晶体的位错密度降低到3/ spl倍/ 10/sup 3/ cm/sup -2/以下。4英寸Fe掺杂InP晶体的位错密度小于5 /spl倍/ 10/sup 4/ cm/sup -2/。通过优化抛光条件，提高了4英寸基板的总厚度变化(TTV)。最小TTV约为1.6微米。4英寸和3英寸掺铁InP衬底的断裂强度无显著差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

4-inch InP crystals grown by phosphorous vapor controlled LEC method

4-inch Fe doped and S doped InP crystals have been grown by phosphorous vapor controlled LEC method (PC-LEC). By controlling the solid / liquid (SL) interface shape, the dislocation density of S doped InP crystals was reduced to less than 3 /spl times/ 10/sup 3/ cm/sup -2/ for the whole ingot. The dislocation density of 4 inch Fe doped InP crystals was less than 5 /spl times/ 10/sup 4/ cm/sup -2/. The total thickness variation (TTV) of 4-inch substrates was improved by optimizing the polishing conditions. The minimum TTV was about 1.6 micrometer. There was no significant difference in breakage strength between 4-inch and 3-inch Fe doped InP substrates.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

自引率

0.00%

发文量