InP上In/sub - 1-x/Ga/sub -x/ As涂层的远红外声子光谱[100]

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014475

N. Rowell, D. J. Lockwood, P. Poole, G. Yu, H. Shin

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引用次数: 0

摘要

对在InP晶片上生长的大量应变In/sub - 1-x/Ga/sub -x/ As薄膜进行了斜入射偏振远红外反射率的测量。从这些测量中，我们获得了在InP上化学束外延生长的应变In/sub - 1-x/Ga/sub -x/ As薄膜的区中心光学声子频率的浓度依赖性[100]。利用该方法，反射光谱精确地在光学声子频率处包含尖锐的贝里曼峰。为了解决单个声子模式的贡献，对测量光谱进行了曲线拟合。通过这一分析，观察到模式包括类gaas纵向和横向光学(LO和TO)，无序诱导(TO-like)和类inas的LO和TO声子。这些声子频率的浓度依赖性，确定为0.31

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Far infrared phonon spectroscopy of In/sub 1-x/Ga/sub x/As epilayers on InP[100]

Polarized far infrared reflectance was measured at oblique incidence for a large number of strained In/sub 1-x/Ga/sub x/As epilayers grown on InP wafers. From these measurements the concentration dependence of the zone-center optical phonon frequencies has been obtained for strained In/sub 1-x/Ga/sub x/As epilayers grown by chemical beam epitaxy on InP[100]. With the method used the reflectance spectra contain sharp Berreman peaks precisely at the optical phonon frequencies. To resolve the contributions of the individual phonon modes, curve fitting of the measured spectra was used. With this analysis it was observed that the modes included GaAs-like longitudinal and transverse optic (LO and TO), a disorder induced (TO-like), and InAs-like LO and TO phonons. The concentration dependence of these phonon frequencies, determined for 0.31

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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