氢化物气相外延在InP预涂硅衬底上选择性生长InP的研究

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014410

Y. Sun, J. Napierala, S. Lourdudoss

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引用次数: 6

摘要

在不同气相过饱和度的低压氢化物气相外延系统中，在InP预涂[001]2/spl度/ off的Si衬底上进行了InP的选择性面积生长。在一定的生长条件下，可以在Si/sub 3/N/sub 4/掩膜上形成外延横向过长，提高了InP种子层的晶体质量。提出了一个晶体学模型来证明所观察到的选择性区域生长的不对称生长曲线。

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Selective area growth of InP on InP precoated silicon substrate by hydride vapor phase epitaxy

Selective area growth of InP is carried out on an InP precoated [001] 2/spl deg/ off Si substrate in a low pressure hydride vapor phase epitaxy system under different gas phase supersaturation. Epitaxial lateral overgrowth can be formed on a Si/sub 3/N/sub 4/ mask under certain growth conditions, which has improved crystallographic quality of the InP seed layer. A crystallographic model is proposed to demonstrate the observed asymmetric growth profile of selective area growth.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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