4-inch InP crystals grown by phosphorous vapor controlled LEC method

Abstract

4-inch Fe doped and S doped InP crystals have been grown by phosphorous vapor controlled LEC method (PC-LEC). By controlling the solid / liquid (SL) interface shape, the dislocation density of S doped InP crystals was reduced to less than 3 /spl times/ 10/sup 3/ cm/sup -2/ for the whole ingot. The dislocation density of 4 inch Fe doped InP crystals was less than 5 /spl times/ 10/sup 4/ cm/sup -2/. The total thickness variation (TTV) of 4-inch substrates was improved by optimizing the polishing conditions. The minimum TTV was about 1.6 micrometer. There was no significant difference in breakage strength between 4-inch and 3-inch Fe doped InP substrates.