Potential of on-line MOVPE reproducibility control of 1.3 /spl mu/m laser structures by optical in-situ measurements

In order to establish a precise on-line control for the MOVPE growth of InP based materials by optical in-situ measurements, we investigated the basic relations between growth parameter changes and optical in-situ data. In Reflectance Anisotropy Spectroscopy (RAS) measurements for varying p- and n-type doping concentrations, the possibilities of an on-line doping concentration determination were investigated. Analysing the active region of a MQW (multi quantum well) laser, RAS turned out even to be sensitive to the composition of thin quantum wells. With the combination of Reflectance (R) and RAS during growth of complete InGaAsP based 1.3 /spl mu/m MQW laser structures, the first characteristic fingerprints of all growth steps were generated.