用于100 GHz以上频率的InGaAs PIN检测器

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014607

M. Agethen, D. Keiper, G. Janssen, A. Brennemann, P. Velling, C. van den Berg, R. Bertenburg

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引用次数: 6

摘要

研究了高p型掺杂InGaAs基层的高频垂直PIN探测器。减小PIN面积和串联电阻，同时减小未掺杂漂移区的厚度，可获得高达120 GHz的f3dB角频率。此外，与波导PIN相比，垂直PIN概念显示出一些优势，例如构建二维探测器阵列的可能性，并且非常适合单片集成光电接收器ic (OEIC)。进一步的PIN和OEIC结果将会公布。

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InGaAs PIN detectors for frequencies above 100 GHz

High-frequency vertical PIN detectors with highly p-type doped InGaAs basis layer were investigated. Reducing the PIN area and series resistance together with the thickness of the undoped drift region results in f3dB corner frequencies of up to 120 GHz. In addition, the vertical PIN concept reveals several advantages compared to waveguide PINs like the possibility to build two dimensional detector arrays and it is perfectly suited for monolithically integrated opto-electronic receiver ICs (OEIC). Further PIN and OEIC results will be presented.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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