Selective area growth of InP on InP precoated silicon substrate by hydride vapor phase epitaxy

Abstract

Selective area growth of InP is carried out on an InP precoated [001] 2/spl deg/ off Si substrate in a low pressure hydride vapor phase epitaxy system under different gas phase supersaturation. Epitaxial lateral overgrowth can be formed on a Si/sub 3/N/sub 4/ mask under certain growth conditions, which has improved crystallographic quality of the InP seed layer. A crystallographic model is proposed to demonstrate the observed asymmetric growth profile of selective area growth.