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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)最新文献

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Large blue shift in GaInAsP/InP vertically-stacked multiple-quantum-wire lasers by dry etching and regrowth processes 干蚀刻和再生工艺在GaInAsP/InP垂直堆叠多量子线激光器中的大蓝移
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014624
H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura, S. Arai
{"title":"Large blue shift in GaInAsP/InP vertically-stacked multiple-quantum-wire lasers by dry etching and regrowth processes","authors":"H. Yagi, K. Muranushi, N. Nunoya, T. Sano, S. Tamura, S. Arai","doi":"10.1109/ICIPRM.2002.1014624","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014624","url":null,"abstract":"GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers with the wire widths of 18 nm and 27 nm in the period of 80 nm were fabricated by electron beam lithography, CH/sub 4//H/sub 2/-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. Size distributions of these quantum-wire structures were measured by scanning electron microscope and the standard deviation was obtained to be less than /spl plusmn/ 2 nm. From EL spectra of various wire widths lasers, a larger energy blue shift than that from a simple analysis model was observed, which can be attributed to residual compressive strain between the active region and surrounding InP layer.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"37 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129410014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Quantum dots as a sensitive tool to monitor charge 量子点作为监测电荷的灵敏工具
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014113
K. Karlsson, P. Holtz, E. Moskalenko, B. Monemar, W. Schoenfeld, J.M. Garcia, P. Petroff
{"title":"Quantum dots as a sensitive tool to monitor charge","authors":"K. Karlsson, P. Holtz, E. Moskalenko, B. Monemar, W. Schoenfeld, J.M. Garcia, P. Petroff","doi":"10.1109/ICIPRM.2002.1014113","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014113","url":null,"abstract":"The excitonic photoluminescence spectra reveal an abrupt change of the charge-state of single In(Ga)As/GaAs quantum dots, for a certain transformation when the excitation energy below the barrier band gap. This transform energy is dependent on the thickness of the underlying wetting layer and the crucial energy is associated with an optical transition involving an energy level of the wetting layer. The effect is proposed to be used as a tool, not only to monitor charge in quantum dots in order to study related phenomena, but also to gain new insight in the electronic structure of strained In(Ga)As/GaAs layers by using the quantum dots as charge-probes.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130577277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability and low-frequency noise of InGaAsP MQW DFB lasers InGaAsP MQW DFB激光器的可靠性和低频噪声
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014369
G. Letal, R. Mallard, S. Smetona, K. Maknys, J. Matukas, V. Palenskis, S. Pralgauskaitė
{"title":"Reliability and low-frequency noise of InGaAsP MQW DFB lasers","authors":"G. Letal, R. Mallard, S. Smetona, K. Maknys, J. Matukas, V. Palenskis, S. Pralgauskaitė","doi":"10.1109/ICIPRM.2002.1014369","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014369","url":null,"abstract":"Low-frequency noise characteristics and their changes during short-time ageing of InGaAsP multiquantum-well distributed-feedback laser diodes were measured with the aim of investigating the reliability of devices. The noise characteristics reveal obvious differences between the stable and degrading lasers operated near the threshold region - an excessive Lorentzian type noise with negative correlation factor was observed at the threshold of degrading devices. The behaviour of the degrading lasers during ageing could be explained by migration of point recombination centres at the interface of an active layer, and by the formation of defect clusters.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121030930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spontaneous ordering in In/sub x/Ga/sub 1-x/P (x/spl ap/0.5) alloys: FIR and Raman spectroscopy studies in /sub x/Ga/sub 1-x/P (x/spl ap/0.5)合金的自发有序:FIR和拉曼光谱研究
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014482
N. V. Baidus, A. Biryukov, A. Rolo, M. Vasilevskiy, O. Vikhrova, B. Zvonkov
{"title":"Spontaneous ordering in In/sub x/Ga/sub 1-x/P (x/spl ap/0.5) alloys: FIR and Raman spectroscopy studies","authors":"N. V. Baidus, A. Biryukov, A. Rolo, M. Vasilevskiy, O. Vikhrova, B. Zvonkov","doi":"10.1109/ICIPRM.2002.1014482","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014482","url":null,"abstract":"Phonon modes in MOVPE grown In/sub 0.5/Ga/sub 0.5/P containing domains with CuPt-type ordering in the cationic sublattice along the [-111] and [1-11] directions were studied by means of FIR and Raman spectroscopy. The observed polarization dependence of the transmittance of the FIR radiation near 370 cm/sup -1/ suggests that this TO-type mode is characteristic not only of the disordered alloy, but also of the ordered InGaP/sub 2/. Ordering-related features observed by Raman spectroscopy include the extra (354 cm/sup -1/) phonon mode appearing (although not clearly resolved) in the allowed z(xy)z [001] scattering, and a clear difference between the spectra taken in z(x'x')z and z(y'y')z configurations. All these effects are noticeably smaller for the InGaP films with lower degree of ordering due to doping with Bi during its growth.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122260305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel gain measurement method without optical fiber alignment in a semiconductor optical amplifier 半导体光放大器中无需光纤对准的增益测量新方法
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014156
K. Magari, T. Ito, H. Kamioka, Y. Tohmori, Y. Suzuki
{"title":"Novel gain measurement method without optical fiber alignment in a semiconductor optical amplifier","authors":"K. Magari, T. Ito, H. Kamioka, Y. Tohmori, Y. Suzuki","doi":"10.1109/ICIPRM.2002.1014156","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014156","url":null,"abstract":"A novel chip gain measurement method for semiconductor optical amplifiers (SOAs) eliminates the need for fiber alignment. The chip gain is clarified based on amplified spontaneous emission (ASE) power measurement through an optical bandpass filter. We clarified the validity of the method theoretically, and successfully demonstrated gain measurement, comparing it with the conventional method with fine fiber alignment. The results agree well, within an error of 1 dB.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125677738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Calibration of SIMS measurements of unintentional oxygen concentrations in Al/sub 0.3/Ga/sub 0.7/N/sub y/As/sub (1-y)/ and assessment of the purity of 1,1-dimethylhydrazine Al/sub 0.3/Ga/sub 0.7/N/sub y/As/sub (1-y)/中无意氧浓度的SIMS测量值的校准和1,1-二甲基肼纯度的评估
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014355
J. O. Maclean, A. Simons, M. Houlton, T. Martin, J. Birbeck
{"title":"Calibration of SIMS measurements of unintentional oxygen concentrations in Al/sub 0.3/Ga/sub 0.7/N/sub y/As/sub (1-y)/ and assessment of the purity of 1,1-dimethylhydrazine","authors":"J. O. Maclean, A. Simons, M. Houlton, T. Martin, J. Birbeck","doi":"10.1109/ICIPRM.2002.1014355","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014355","url":null,"abstract":"There is significant commercial interest in 1.3 /spl mu/m dilute nitride-based laser devices. Such devices rely on low concentrations of nonradiative centres in the active region in order to achieve the predicted high performances. Unintentional oxygen contamination in alkyl precursors used in the epitaxy is a source of nonradiative centres. An investigation of the Secondary Ion Mass Spectrometry (SIMS) relative sensitivity factor (RSF) for oxygen in Al/sub 0.3/Ga/sub 0.7/N/sub y/As/sub (1-y)/ was made in order to calibrate and compare background oxygen impurities in 3 different precursor batches of dimethylhydrazine (DMHy). A DMHy batch was identified which gave background oxygen concentrations in Al-containing layers below the SIMS detection limit (2-8E16 cm/sup -3/) with 0.2% nitrogen content. Therefore, providing that suitable growth conditions are chosen such that nonradiative centres other than oxygen do not form, this DMHy precursor batch is expected to give In/sub x/Ga/sub (1-x)/N/sub 0.002/As/sub 0.998/ quantum wells with good luminescence properties.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125118350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Two- and three-sectional laterally coupled DBR laser fabricated by focused ion beam lithography 聚焦离子束光刻制备两段和三段横向耦合DBR激光器
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014132
L. Bach, A. Wolf, J. Reithmaier, A. Forchel, J. Gentner, L. Goldstein
{"title":"Two- and three-sectional laterally coupled DBR laser fabricated by focused ion beam lithography","authors":"L. Bach, A. Wolf, J. Reithmaier, A. Forchel, J. Gentner, L. Goldstein","doi":"10.1109/ICIPRM.2002.1014132","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014132","url":null,"abstract":"By using focused ion beam lithography, high performance 1.55 /spl mu/m emitting distributed Bragg reflector lasers were realized suitable for high speed optical telecommunication. Threshold currents of 8 mA and continuous wave efficiencies of 0.37 W/A for 600 /spl mu/m long devices were achieved. Stable single mode emission with side mode suppression ratios of > 40 dB were observed for the entire operation range. By using 3-sectional DBR-lasers, we could increase the output power of the lasers up to 68 mW. Also we achieved a higher single mode yield with side mode suppression ratios of more than 60 dB and a higher thermal stability.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130398525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High In content GaInAsN on InP: composition dependent band gap energy and luminescence properties InP上的高In含量GaInAsN:组分依赖性带隙能和发光特性
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014449
D. Serries, T. Geppert, P. Ganser, K. Kohler, J. Wagner
{"title":"High In content GaInAsN on InP: composition dependent band gap energy and luminescence properties","authors":"D. Serries, T. Geppert, P. Ganser, K. Kohler, J. Wagner","doi":"10.1109/ICIPRM.2002.1014449","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014449","url":null,"abstract":"Quaternary pseudomorphically strained Ga/sub 1-x/In/sub x/As/sub 1-y/N/sub y/ films and double quantum wells (0.53 /spl les/ x /spl les/ 0.70, 0 /spl les/ y /spl les/ 0.024) were grown by plasma assisted molecular beam epitaxy on InP substrates. A reduction of compressive strain and a low-energy shift of photoluminescence (PL) peak position was observed with increasing N concentration. The deterioration of the PL properties in terms of reduced peak intensity and increased linewidth with increasing N incorporation can be partially compensated by rapid thermal annealing, which is accompanied by a blue-shift with respect to the as-grown samples. From the measured PL peak energies of the as-grown samples the net effect of N incorporation on the GaInAsN bandgap energy was deduced. The band anticrossing model was fitted to the obtained composition dependent GaInAsN bandgap energy resulting in values for the interaction parameter C/sub MN/ for high In content GaInAsN which are only slightly smaller than that reported for low In content GaInAsN on GaAs.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133498786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metalorganic vapor phase epitaxy 常压金属有机气相外延生长自组装GaIn(N)As量子点
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014348
T. Hakkarainen, J. Toivonen, M. Sopanen, H. Lipsanen
{"title":"Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metalorganic vapor phase epitaxy","authors":"T. Hakkarainen, J. Toivonen, M. Sopanen, H. Lipsanen","doi":"10.1109/ICIPRM.2002.1014348","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014348","url":null,"abstract":"Self-assembled GaIn(N)As quantum dots were fabricated on GaAs by atmospheric pressure metalorganic vapor phase epitaxy using dimethylethylamine (DMHy) precursor as a nitrogen source. GaIn(N)As islands showed only a small change in size and density with increasing growth temperature and the average size of the islands was observed to be almost independent of the growth rate. The incorporation of nitrogen into the islands was observed to be negligible. However, the areal density of the islands was increased by up to one order of magnitude compared to that of the respective GaInAs islands. The GaIn(N)As island size can also be controlled by varying the DMHy flow. A significant enhancement of the room-temperature luminescence at 1.3 /spl mu/m was observed in the GaIn(N)As samples grown with DMHy.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122426867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits MSI InP/InGaAs DHBT技术:超过40gbit /s的电路
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014099
S. Blayac, M. Riet, J. Benchimol, F. Alexandre, P. Berdaguer, M. Kahn, A. Pinquier, E. Dutisseuil, J. Moulu, A. Kasbari, A. Konczykowska, J. Godin
{"title":"MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits","authors":"S. Blayac, M. Riet, J. Benchimol, F. Alexandre, P. Berdaguer, M. Kahn, A. Pinquier, E. Dutisseuil, J. Moulu, A. Kasbari, A. Konczykowska, J. Godin","doi":"10.1109/ICIPRM.2002.1014099","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014099","url":null,"abstract":"We present current results obtained on IC-oriented OPTO+ InP DHBT lab technology. Transistors with 180/210 GHz F/sub t//F/sub max/, current gain of 50 and BV/sub ce0/=7V are currently fabricated with >99% fabrication yield. Uniformity measurements show a standard deviation on F/sub t/ and F/sub max/ lower than 2% and lower than 5% on all investigated parameters. In a second part DHBT-specific modelling issues are discussed. A 68 Gbit/s selector has been obtained and a 40 Gbit/s master-slave D-type flip-flop (MS-DFF) has been reproducibly fabricated with >50% functional yield using this technology.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"528 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123902060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
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