Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metalorganic vapor phase epitaxy

Abstract

Self-assembled GaIn(N)As quantum dots were fabricated on GaAs by atmospheric pressure metalorganic vapor phase epitaxy using dimethylethylamine (DMHy) precursor as a nitrogen source. GaIn(N)As islands showed only a small change in size and density with increasing growth temperature and the average size of the islands was observed to be almost independent of the growth rate. The incorporation of nitrogen into the islands was observed to be negligible. However, the areal density of the islands was increased by up to one order of magnitude compared to that of the respective GaInAs islands. The GaIn(N)As island size can also be controlled by varying the DMHy flow. A significant enhancement of the room-temperature luminescence at 1.3 /spl mu/m was observed in the GaIn(N)As samples grown with DMHy.