InGaAsP MQW DFB激光器的可靠性和低频噪声

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014369

G. Letal, R. Mallard, S. Smetona, K. Maknys, J. Matukas, V. Palenskis, S. Pralgauskaitė

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引用次数: 0

摘要

测量了InGaAsP多量子分布反馈激光二极管的低频噪声特性及其短时老化过程中的变化，探讨了器件的可靠性。在阈值区域附近工作的稳定激光器和退化激光器的噪声特性存在明显的差异，在退化器件阈值处观察到过量的具有负相关因子的洛伦兹型噪声。老化过程中退化激光的行为可以用活性层界面点复合中心的迁移和缺陷团簇的形成来解释。

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Reliability and low-frequency noise of InGaAsP MQW DFB lasers

Low-frequency noise characteristics and their changes during short-time ageing of InGaAsP multiquantum-well distributed-feedback laser diodes were measured with the aim of investigating the reliability of devices. The noise characteristics reveal obvious differences between the stable and degrading lasers operated near the threshold region - an excessive Lorentzian type noise with negative correlation factor was observed at the threshold of degrading devices. The behaviour of the degrading lasers during ageing could be explained by migration of point recombination centres at the interface of an active layer, and by the formation of defect clusters.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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