in /sub x/Ga/sub 1-x/P (x/spl ap/0.5)合金的自发有序:FIR和拉曼光谱研究

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014482

N. V. Baidus, A. Biryukov, A. Rolo, M. Vasilevskiy, O. Vikhrova, B. Zvonkov

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引用次数: 0

摘要

利用红外光谱和拉曼光谱研究了沿[-111]和[1-11]方向生长在含in /sub 0.5/Ga/sub 0.5/P的阳离子亚晶格中具有cupt型有序结构域的MOVPE声子模。在370 cm/sup -1/附近观测到的FIR辐射透过率的偏振依赖性表明，这种to型模式不仅是无序合金的特征，也是有序合金InGaP/sub 2/的特征。拉曼光谱观察到的有序相关特征包括在允许的z(xy)z[001]散射中出现的额外(354 cm/sup -1/)声子模式(尽管没有明确分辨)，以及z(x'x')z和z(y'y')z构型的光谱之间的明显差异。对于有序度较低的InGaP薄膜，由于在生长过程中掺杂了Bi，这些影响都明显较小。

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Spontaneous ordering in In/sub x/Ga/sub 1-x/P (x/spl ap/0.5) alloys: FIR and Raman spectroscopy studies

Phonon modes in MOVPE grown In/sub 0.5/Ga/sub 0.5/P containing domains with CuPt-type ordering in the cationic sublattice along the [-111] and [1-11] directions were studied by means of FIR and Raman spectroscopy. The observed polarization dependence of the transmittance of the FIR radiation near 370 cm/sup -1/ suggests that this TO-type mode is characteristic not only of the disordered alloy, but also of the ordered InGaP/sub 2/. Ordering-related features observed by Raman spectroscopy include the extra (354 cm/sup -1/) phonon mode appearing (although not clearly resolved) in the allowed z(xy)z [001] scattering, and a clear difference between the spectra taken in z(x'x')z and z(y'y')z configurations. All these effects are noticeably smaller for the InGaP films with lower degree of ordering due to doping with Bi during its growth.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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