L. Bach, A. Wolf, J. Reithmaier, A. Forchel, J. Gentner, L. Goldstein
{"title":"聚焦离子束光刻制备两段和三段横向耦合DBR激光器","authors":"L. Bach, A. Wolf, J. Reithmaier, A. Forchel, J. Gentner, L. Goldstein","doi":"10.1109/ICIPRM.2002.1014132","DOIUrl":null,"url":null,"abstract":"By using focused ion beam lithography, high performance 1.55 /spl mu/m emitting distributed Bragg reflector lasers were realized suitable for high speed optical telecommunication. Threshold currents of 8 mA and continuous wave efficiencies of 0.37 W/A for 600 /spl mu/m long devices were achieved. Stable single mode emission with side mode suppression ratios of > 40 dB were observed for the entire operation range. By using 3-sectional DBR-lasers, we could increase the output power of the lasers up to 68 mW. Also we achieved a higher single mode yield with side mode suppression ratios of more than 60 dB and a higher thermal stability.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two- and three-sectional laterally coupled DBR laser fabricated by focused ion beam lithography\",\"authors\":\"L. Bach, A. Wolf, J. Reithmaier, A. Forchel, J. Gentner, L. Goldstein\",\"doi\":\"10.1109/ICIPRM.2002.1014132\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By using focused ion beam lithography, high performance 1.55 /spl mu/m emitting distributed Bragg reflector lasers were realized suitable for high speed optical telecommunication. Threshold currents of 8 mA and continuous wave efficiencies of 0.37 W/A for 600 /spl mu/m long devices were achieved. Stable single mode emission with side mode suppression ratios of > 40 dB were observed for the entire operation range. By using 3-sectional DBR-lasers, we could increase the output power of the lasers up to 68 mW. Also we achieved a higher single mode yield with side mode suppression ratios of more than 60 dB and a higher thermal stability.\",\"PeriodicalId\":145425,\"journal\":{\"name\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"volume\":\"110 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2002.1014132\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2002.1014132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two- and three-sectional laterally coupled DBR laser fabricated by focused ion beam lithography
By using focused ion beam lithography, high performance 1.55 /spl mu/m emitting distributed Bragg reflector lasers were realized suitable for high speed optical telecommunication. Threshold currents of 8 mA and continuous wave efficiencies of 0.37 W/A for 600 /spl mu/m long devices were achieved. Stable single mode emission with side mode suppression ratios of > 40 dB were observed for the entire operation range. By using 3-sectional DBR-lasers, we could increase the output power of the lasers up to 68 mW. Also we achieved a higher single mode yield with side mode suppression ratios of more than 60 dB and a higher thermal stability.