High In content GaInAsN on InP: composition dependent band gap energy and luminescence properties

Abstract

Quaternary pseudomorphically strained Ga/sub 1-x/In/sub x/As/sub 1-y/N/sub y/ films and double quantum wells (0.53 /spl les/ x /spl les/ 0.70, 0 /spl les/ y /spl les/ 0.024) were grown by plasma assisted molecular beam epitaxy on InP substrates. A reduction of compressive strain and a low-energy shift of photoluminescence (PL) peak position was observed with increasing N concentration. The deterioration of the PL properties in terms of reduced peak intensity and increased linewidth with increasing N incorporation can be partially compensated by rapid thermal annealing, which is accompanied by a blue-shift with respect to the as-grown samples. From the measured PL peak energies of the as-grown samples the net effect of N incorporation on the GaInAsN bandgap energy was deduced. The band anticrossing model was fitted to the obtained composition dependent GaInAsN bandgap energy resulting in values for the interaction parameter C/sub MN/ for high In content GaInAsN which are only slightly smaller than that reported for low In content GaInAsN on GaAs.