MSI InP/InGaAs DHBT技术:超过40gbit /s的电路

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014099

S. Blayac, M. Riet, J. Benchimol, F. Alexandre, P. Berdaguer, M. Kahn, A. Pinquier, E. Dutisseuil, J. Moulu, A. Kasbari, A. Konczykowska, J. Godin

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引用次数: 39

摘要

我们介绍了目前在面向ic的OPTO+ InP DHBT实验室技术上获得的结果。目前，生产的180/210 GHz F/sub / t//F/sub max/、电流增益为50、BV/sub ce0/=7V的晶体管的产率>99%。均匀性测量结果表明，F/sub t/和F/sub max/的标准差均小于2%，所有研究参数的标准差均小于5%。第二部分讨论了dhbt特有的建模问题。利用该技术获得了68 Gbit/s的选择器和40 Gbit/s的主从d型触发器(MS-DFF)，功能收率>50%。

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MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits

We present current results obtained on IC-oriented OPTO+ InP DHBT lab technology. Transistors with 180/210 GHz F/sub t//F/sub max/, current gain of 50 and BV/sub ce0/=7V are currently fabricated with >99% fabrication yield. Uniformity measurements show a standard deviation on F/sub t/ and F/sub max/ lower than 2% and lower than 5% on all investigated parameters. In a second part DHBT-specific modelling issues are discussed. A 68 Gbit/s selector has been obtained and a 40 Gbit/s master-slave D-type flip-flop (MS-DFF) has been reproducibly fabricated with >50% functional yield using this technology.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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