Large blue shift in GaInAsP/InP vertically-stacked multiple-quantum-wire lasers by dry etching and regrowth processes

GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers with the wire widths of 18 nm and 27 nm in the period of 80 nm were fabricated by electron beam lithography, CH/sub 4//H/sub 2/-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. Size distributions of these quantum-wire structures were measured by scanning electron microscope and the standard deviation was obtained to be less than /spl plusmn/ 2 nm. From EL spectra of various wire widths lasers, a larger energy blue shift than that from a simple analysis model was observed, which can be attributed to residual compressive strain between the active region and surrounding InP layer.