GaAs上生长的应变补偿InGaAs-InGaP超晶格的亚带间和带间光学吸收研究

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014483

M. Semtsiv, G. G. Tarasov, H. Kissel, F. Eickemeyer, W. Masselink

{"title":"GaAs上生长的应变补偿InGaAs-InGaP超晶格的亚带间和带间光学吸收研究","authors":"M. Semtsiv, G. G. Tarasov, H. Kissel, F. Eickemeyer, W. Masselink","doi":"10.1109/ICIPRM.2002.1014483","DOIUrl":null,"url":null,"abstract":"Strain-compensated In/sub 0.32/Ga/sub 0.68/As-In/sub 0.32/Ga/sub 0.68/P superlattices have been grown on semiinsulating [001] GaAs substrates using gas-source molecular-beam epitaxy and their subband structures investigated. Both visible and mid-infrared optical transmission measurements were used to determine the energies of the 1e-2e transitions as a function of superlattice structure. The highest energy 1e-2e transition obtained is 218 meV, corresponding to a wavelength of 5.7 /spl mu/m. The conduction band offset between the strained In/sub 0.32/Ga/sub 0.68/As and In/sub 0.32/Ga/sub 0.68/P appears to lie between 400 and 500 meV.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Intersubband and interband optical absorption study of strain-compensated InGaAs-InGaP superlattices grown on GaAs\",\"authors\":\"M. Semtsiv, G. G. Tarasov, H. Kissel, F. Eickemeyer, W. Masselink\",\"doi\":\"10.1109/ICIPRM.2002.1014483\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Strain-compensated In/sub 0.32/Ga/sub 0.68/As-In/sub 0.32/Ga/sub 0.68/P superlattices have been grown on semiinsulating [001] GaAs substrates using gas-source molecular-beam epitaxy and their subband structures investigated. Both visible and mid-infrared optical transmission measurements were used to determine the energies of the 1e-2e transitions as a function of superlattice structure. The highest energy 1e-2e transition obtained is 218 meV, corresponding to a wavelength of 5.7 /spl mu/m. The conduction band offset between the strained In/sub 0.32/Ga/sub 0.68/As and In/sub 0.32/Ga/sub 0.68/P appears to lie between 400 and 500 meV.\",\"PeriodicalId\":145425,\"journal\":{\"name\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2002.1014483\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2002.1014483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用气源分子束外延技术在半绝缘[001]GaAs衬底上生长了应变补偿的In/sub 0.32/Ga/sub 0.68/As-In/sub 0.32/Ga/sub 0.68/P超晶格，并对其亚带结构进行了研究。可见光和中红外光透射测量被用来确定1e-2e跃迁的能量作为超晶格结构的函数。得到的1e-2e跃迁最高能量为218 meV，对应波长为5.7 /spl mu/m。In/sub 0.32/Ga/sub 0.68/As与In/sub 0.32/Ga/sub 0.68/P之间的导带偏置在400 ~ 500 meV之间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Intersubband and interband optical absorption study of strain-compensated InGaAs-InGaP superlattices grown on GaAs

Strain-compensated In/sub 0.32/Ga/sub 0.68/As-In/sub 0.32/Ga/sub 0.68/P superlattices have been grown on semiinsulating [001] GaAs substrates using gas-source molecular-beam epitaxy and their subband structures investigated. Both visible and mid-infrared optical transmission measurements were used to determine the energies of the 1e-2e transitions as a function of superlattice structure. The highest energy 1e-2e transition obtained is 218 meV, corresponding to a wavelength of 5.7 /spl mu/m. The conduction band offset between the strained In/sub 0.32/Ga/sub 0.68/As and In/sub 0.32/Ga/sub 0.68/P appears to lie between 400 and 500 meV.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

自引率

0.00%

发文量