High reliability of 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014426

Y. Chou, D. Leung, R. Lai, R. Grundbacher, M. Barsky, R. Tsai, D. Eng, M. Wojtowicz, M. Nishimoto, P. Liu, A. Oki, D. Streit

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引用次数: 8

Abstract

The high-reliability performance of G-band (180 GHz) MMIC amplifiers fabricated using 0.07 pm T-gate pseudomorphic InGaAs/InAlAs/InP HEMTs on 3-inch wafers is reported. Low noise amplifiers were life-tested at two-temperatures (T/sub 1/ = 200/spl deg/C and T/sub 2/ = 215/spl deg/C) and stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2/spl times/10/sup 6/ hours at a channel temperature of 125/spl deg/C. MTTF was determined by 2-temperature constant current stress using |/spl Delta/G/sub mp/| > 20% as the failure criteria. This is the first demonstration of the high reliability of 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on a 3-inch InP production process. This result demonstrates a robust 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT production technology for G-band applications.

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在3英寸InP衬底上实现0.07 /spl μ m伪晶InGaAs/InAlAs/InP HEMT mmic的高可靠性

报道了在3英寸晶圆上采用0.07 pm t栅极假晶InGaAs/InAlAs/InP hemt制备的g波段(180 GHz) MMIC放大器的高可靠性性能。低噪声放大器在两种温度下(T/sub 1/ = 200/spl度/C和T/sub 2/ = 215/spl度/C)进行寿命测试，并在N/sub 2/环境中在V/sub ds/为1 V和I/sub ds/为250 mA/mm的应力下进行应力测试。活化能高达1.7 eV，在125/spl℃的通道温度下，实现了预计的平均失效时间(MTTF) /spl ap/ 2/spl times/10/sup / 6/ h。MTTF采用2℃恒流应力法测定，失效准则为|/spl Delta/G/sub mp/| > 20%。这是在3英寸InP生产工艺上首次展示了0.07 /spl mu/m伪晶InGaAs/InAlAs/InP HEMT mmic的高可靠性。该结果证明了用于g波段应用的稳健的0.07 /spl mu/m伪晶InGaAs/InAlAs/InP HEMT生产技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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